Abstract:Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 {\mu}B/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn-V and Mn-Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications.

What problem does this paper attempt to address?

The paper primarily investigates the atomic ordering, magnetism, and transport properties of Mn2VGa (a half-metallic Heusler alloy) thin films at different stoichiometries to achieve negative spin polarization charge injection, which is of significant importance for the design flexibility of spintronic devices. The study prepared a series of stoichiometric and off-stoichiometric Mn2+xV1-xGa thin films by controlling the concentrations of Mn and V and optimized the thermal treatment parameters through high-temperature deposition and annealing. Experimental results indicate that the addition of excess Mn (x = +0.2) can significantly enhance the degree of L21 order, achieving near-perfect B2 order and higher L21 order parameters while maintaining high saturation magnetization, in accordance with the Slater-Pauling rule. First-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn suppresses the formation of detrimental V antisite defects, preserving the material's high spin polarization characteristics. Therefore, the composition with excess Mn holds great potential for achieving negative spin polarization charge injection in spintronic applications based on Mn2VGa. The paper employs various characterization techniques, including laboratory and synchrotron radiation X-ray diffraction, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy, to thoroughly study the crystal structure, atomic ordering, and defects of the thin films. The study also uses first-principles calculations to compute the density of states at different ordered states, finding that the material exhibits a larger negative spin polarization in the L21 ordered state, while the B2 ordered state significantly deteriorates this property. Furthermore, the relationship between spin polarization and atomic ordering is further verified through anisotropic magnetoresistance measurements, providing deeper insights into the origin of spin polarization characteristics in Mn2VGa alloys. Combining experimental and theoretical analysis, the paper emphasizes the importance of composition tuning and optimizing thermal treatment processes to improve atomic ordering, microstructure, and magnetic transport properties for enhancing the performance of Mn2VGa-based spintronic materials.

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