Improvement of magnetostriction performance by doping Mg in spinel MnV 2 O 4

Qing-Yuan Liu,Zi-Yi Liu,Lei Tao,Jian Liu,Xue-Bo Zhou,Ming-Xue Huo,Xian-Jie Wang,Yu Sui
DOI: https://doi.org/10.1063/5.0040531
IF: 4
2021-02-22
Applied Physics Letters
Abstract:By a combination of magnetization <i>M</i>(<i>T</i>), <i>M</i>(<i>H</i>) and strain <span class="equationTd inline-formula"><math> Δ</math></span><i>L</i>/<i>L</i><sub>700K</sub>, <span class="equationTd inline-formula"><math> Δ</math></span><i>L</i>/<i>L</i><sub>0Oe</sub>, the positive magnetostrictions up to ∼5000 ppm originating from the rearrangement of tetragonal domains were observed in spinel Mn<sub>0.85</sub>Mg<sub>0.15</sub>V<sub>2</sub>O<sub>4</sub>, which exhibits two successive magnetic transitions at <i>T</i><sub>C</sub> ∼ 42 K and <i>T</i><sup>*</sup> ∼ 28 K. An anomalous magnetic hysteresis loop under a high field occurs below <i>T</i><sup>*</sup>, caused by the rearrangement of tetragonal domains. We found that the Mg-doping at the Mn site can effectively promote the positive magnetostriction in Mn<sub>1-</sub><sub><i>x</i></sub>Mg<sub><i>x</i></sub>V<sub>2</sub>O<sub>4</sub> systems. Moreover, the remnant strain can be significantly lowered by Mg-doping due to the enhancement of magnetic anisotropy. These results provide a possible approach for further optimizing the performance of magnetic shape-memory materials.
physics, applied
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