Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS 3 /Fe 3 GeTe 2 Stacking Heterostructure
Guojing Hu,Yuanmin Zhu,Junxiang Xiang,Tzu-Yi Yang,Meng Huang,Zhe Wang,Zhi Wang,Ping Liu,Ying Zhang,Chao Feng,Dazhi Hou,Wenguang Zhu,Meng Gu,Chia-Hsiu Hsu,Feng-Chuan Chuang,Yalin Lu,Bin Xiang,Yu-Lun Chueh
DOI: https://doi.org/10.1021/acsnano.0c05252
IF: 17.1
2020-09-04
ACS Nano
Abstract:The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> when the temperature is below the Neel temperature of MnPS<sub>3</sub>. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe<sub>3</sub>GeTe<sub>2</sub> during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c05252?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c05252</a>.Additional experimental details including crystal information on FGT and MPS, magnetic properties of FGT and MPS, ohmic contacts, cross-sectional high-resolution TEM image of the MPS/FGT heterostructure, magnetic field dependence of <i>R</i><sub><i>xx</i></sub> and <i>R</i><sub><i>xy</i></sub> of single FGT, angular dependence of <i>R</i><sub><i>xx</i></sub> and <i>R</i><sub><i>xy</i></sub> in MPS/FGT heterostructure at 40 K, <i>R</i><sub><i>xx</i></sub> and <i>R</i><sub><i>xy</i></sub> of MPS/FGT heterostructure under different sweep rates, influence of the ferromagnetic layer thickness on exchange bias, raw data of <a class="internalNav" href="#fig2">Figure </a><a class="internalNav" href="#fig2">2</a>b, and model of the Rashba spin splitting and band structure calculation (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c05252/suppl_file/nn0c05252_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology