Mn$_2$VAl Heusler alloy thin films: Appearance of antiferromagnetism and an exchange bias in a layered structure with Fe

Tomoki Tsuchiya,Ryota Kobayashi,Takahide Kubota,Kotaro Saito,Kanta Ono,Takashi Ohhara,Akiko Nakao,Koki Takanashi
DOI: https://doi.org/10.1088/1361-6463/aaa41a
2017-07-21
Abstract:Mn$_2$VAl Heusler alloy films were epitaxially grown on MgO(100) single crystal substrates by means of ultra-high-vacuum magnetron sputtering. A2 and L2$_1$ type Mn$_2$VAl order was controlled by the deposition temperatures. A2-type Mn$_2$VAl films showed no spontaneous magnetization and L2$_1$-type Mn$_2$VAl films showed ferrimagnetic behavior with a maximum saturation magnetization of 220 emu/cm$^3$ at room temperature. An antiferromagnetic reflection was observed with neutron diffraction at room temperature for an A2-type Mn$_2$VAl film deposited at 400$^\circ$C. A bilayer sample of the antiferromagnetic A2 Mn$_2$VAl and Fe showed an exchange bias of 120 Oe at 10 K.
Applied Physics,Materials Science
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