Abstract:Disorder, traditionally believed to hinder the propagation of waves. has recently been shown to prompt the occurrence of topological phase transitions. For example, when disorder strength continuously increases and surpasses certain critical value, a phase transition from topologically trivial to nontrivial insulating phases occurs. However, in the parameter domain of the nontrivial phase, whether there exists a finer phase diagram that can be further classified by different disorder strengths is still unclear. Here we present a successive topological phase transition driven by the disorder strength in a higher-order topological insulator with long-range couplings. As the strength of the disorder gradually increases, the real-space topological invariant of the system undergoes a consecutive change from 0 to 4, accompanied by the stepped increase in the number of boundary-localized corner states. Our work opens an avenue for utilizing disorder to induce phase transitions among different higher-order topological insulators.

What problem does this paper attempt to address?

The paper primarily explores how the introduction of disorder can induce successive topological phase transitions in two-dimensional Higher-Order Topological Insulators (HOTIs). Specifically, the researchers constructed a two-dimensional Benalcazar-Bernevig-Hughes (BBH) model with long-range coupling and introduced different sublattices, which respond differently to the disorder strength. As the disorder strength gradually increases, the system's real-space topological invariant changes from 0 to 4, accompanied by a stepwise increase in the number of boundary-localized corner states. This indicates that the system undergoes continuous transitions from a topologically trivial phase to a series of different non-trivial topological phases. When the disorder is further enhanced, the system enters the Anderson Localization (AL) phase, where all states become localized. This work reveals how disorder affects the topological properties in higher-order topological insulators and demonstrates the possibility of controlling the number of corner states by adjusting the disorder strength. This provides a theoretical foundation for designing new types of low-dimensional disordered topological devices. Additionally, the paper discusses the potential widespread existence of this phenomenon in other types of topological insulators and proposes the possibility of experimental realization in fields such as acoustics, circuits, and photonics.

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