Abstract:In two-dimensional topological insulators, a disorder induced topological phase transition is typically identified with an Anderson localization transition at the Fermi energy. However, in higher-order, spin-resolved topological insulators it is the spectral gap of the spin-spectrum, in addition to the bulk mobility gap, which protects the non-trivial topology of the ground state. In this work, we show that these two gaps, the bulk electronic and spin gap, evolve distinctly upon introduction of disorder. This decoupling leads to a unique situation in which an Anderson localization transition occurs below the Fermi energy at the topological transition. Furthermore, in the clean limit the bulk-boundary correspondence of such higher-order insulators is dictated by crystalline protected topology, coexisting with the spin-resolved topology. By removing the crystalline symmetry, disorder allows for isolated study of the bulk-boundary correspondence of spin-resolved topology for which we demonstrate the absence of protected edge and corner modes in the Hamiltonian and yet the edge modes in the eigenstates of the projected spin operator survive. Our work shows that a non-zero spin-Chern number, in the absence of a non-trivial $\mathbb{Z}_{2}$ index, does not dictate the existence of protected edge modes, resolving a fundamental question posed in 2009.

What problem does this paper attempt to address?

The paper primarily explores the decoupling issue between the electronic gap and the spin Chern number in disordered higher-order topological insulators (HOTIs). Specifically, the study focuses on the following core issues: 1. **Distinct Evolution of Electronic Gap and Spin Gap**: In the presence of disorder, the paper demonstrates that the bulk electronic gap and the spin gap can evolve independently. This decoupling phenomenon leads to a unique situation where the Anderson localization transition occurs below the Fermi level during a topological phase transition. 2. **Impact of Disorder on Topological Properties**: For higher-order topological insulators, when disorder does not break the symmetry that protects their topological properties, researchers typically study the electronic spectrum while ignoring the spin spectrum. However, when disorder breaks these symmetries, both the electronic spectrum and the spin spectrum need to be considered. By extending the concept of the density of states to the spin spectrum, the authors show how to study the changes in these two gaps with disorder separately. 3. **Existence of Edge Modes**: In the clean limit, higher-order topological insulators support two types of topological properties—those based on lattice symmetry and those based on spin-resolved topology. After removing lattice symmetry, although there are no protected edge and corner modes in the states of the Hamiltonian, the edge states of the projected spin operator still exist. This indicates that a non-zero spin Chern number does not necessarily imply the existence of protected edge modes, addressing a fundamental issue raised in 2009. In summary, the main contribution of this paper is to reveal the possible independent evolution mechanism between the electronic gap and the spin gap in disordered higher-order topological insulators and to explore the impact of this mechanism on topological boundary modes. This finding helps to deepen the understanding of the impact of disorder on the topological properties of topological materials and may provide a theoretical basis for designing new functional materials.

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