Abstract:The Chern-Hopf insulator is an unconventional three-dimensional topological insulator with a bulk gap and gapless boundary states without protection from global discrete symmetries. This study investigates its fate in the presence of disorder. We find it stable up to moderate disorder by analyzing the surface states and the zero energy bulk density of states using large-scale numerical simulation and the self-consistent Born approximation. The disordered Chern-Hopf insulator shows reentrant behavior: the disorder initially enhances the topological phase before driving it across an insulator-diffusive metal transition. We examine the associated critical exponents via finite-size scaling of the bulk density of states, participation entropy, and two-terminal conductance. We estimate the correlation length exponent $\nu\simeq 1.0(1)$, consistent with the clean two-dimensional Chern universality and distinct from the integer quantum Hall exponent.

What problem does this paper attempt to address?

### Problems Addressed by the Paper This paper primarily explores the behavior and phase transition characteristics of the Chern-Hopf Insulator (CHI) under disordered conditions. Specifically: 1. **Stability of the Chern-Hopf Insulator**: - Investigates whether the surface states of CHI remain stable under different intensities of disorder. - Finds that the surface states remain stable under weak to moderate disorder but gradually disappear under strong disorder. 2. **Topological Phase to Diffusive Metal Phase Transition**: - Studies the impact of disorder on CHI through large-scale numerical simulations and Self-Consistent Born Approximation (SCBA). - Discovers that disorder initially enhances the topological phase and then drives the system through an insulator-to-diffusive metal phase transition point. 3. **Critical Exponent Analysis**: - Uses finite-size scaling analysis to study observables such as zero-energy density of states, participation entropy, and two-terminal conductance, obtaining a correlation length exponent $ \nu \approx 1.0(1) $. - This result is consistent with the universality of a clean 2D Chern insulator but differs from the traditional 3D integer quantum Hall effect. 4. **Dynamic Scaling**: - Calculates the dynamic scaling of energy density, obtaining a dynamic exponent $ z \approx 0.85 $, consistent with the low-energy dispersion relation. 5. **Phase Diagram**: - Draws the phase diagram of CHI under different disorder intensities, showing the transition from the topological phase to the diffusive metal phase. - The phase diagram reveals a reentrant phase boundary, indicating that as disorder intensity increases, the topological phase first strengthens and then disappears. In summary, this paper aims to explore the impact of disorder on the 3D Chern-Hopf Insulator and reveal its phase transition behavior and critical properties under different disorder conditions.

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