Abstract:We investigate disordered-driven transitions between trivial and topological insulator (TI) phases in two-dimensional (2D) systems. Our study primarily focuses on the BHZ model with Anderson disorder, while other standard 2DTI models exhibit equivalent features. The analysis is based on the local Chern marker (LCM), a local quantity that allows for the characterization of topological transitions in finite and disordered systems. Our simulations indicate that disorder-driven trivial to topological insulator transitions are nicely characterized by $\mathcal{C}_0$, the disorder averaged LCM near the central cell of the system. We show that $\mathcal{C}_0$ is characterized by a single-parameter scaling, namely, $\mathcal{C}_0(M, W, L) \equiv \mathcal{C}_0(z)$ with $z = [W^\mu-W_c^\mu(M)]L$, where $M$ is the Dirac mass, $W$ is the disorder strength and $L$ is the system size, while $W_c(M) \propto \sqrt{M}$ and $\mu \approx 2$ stand for the critical disorder strength and critical exponent, respectively. Our numerical results are in agreement with a theoretical prediction based on a first-order Born approximation (1BA) analysis. These observations lead us to speculate that the universal scaling function we have found is rather general for amorphous and disorder-driven topological phase transitions.

What problem does this paper attempt to address?

The paper primarily explores the phase transition problem induced by disorder in two-dimensional topological insulators (TI), particularly the transition from a trivial insulator to a topological insulator (topological Anderson insulator, TAI). The core of the research lies in using the local Chern marker (LCM) to characterize this transition and analyzing the scale invariance characteristics and critical exponents of these transitions through numerical simulations. Specifically, the main contributions of the paper include: 1. **Proposing a new scaling method**: By defining a disorder-averaged local Chern marker $C_0$ at the center of the system, this quantity can well characterize the phase transition from a trivial to a topological insulator induced by disorder. 2. **Single-parameter scaling function**: The authors found that $C_0$ can be expressed as a function of a single parameter $z$, where $z$ includes information such as disorder strength $W$, system size $L$, and critical disorder strength $W_c$. This indicates the existence of a universal scaling function for this type of phase transition. 3. **Critical exponent and critical point**: Through numerical simulations, the critical exponent $\mu \approx 2$ and critical disorder strength $W_c \approx 86$ meV were determined. These parameters are significant for understanding topological phase transitions. 4. **Consistency between theoretical predictions and numerical results**: The research results are consistent with theoretical predictions based on first-order Born approximation analysis, further supporting the universality and effectiveness of the proposed scaling function. In summary, this study not only deepens our understanding of the effects of disorder in topological insulator materials but also provides a theoretical framework and technical tools for exploring other types of topological phase transitions in the future.

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