Hugo Lóio,Miguel Gonçalves,Pedro Ribeiro,Eduardo V. Castro
Abstract:We have found the first instance of a third-order topological Anderson insulator (TOTAI). This disorder-induced topological phase is gapped and characterized by a quantized octupole moment and topologically protected corner states, as revealed by a detailed numerically exact analysis. We also find that the disorder-induced transition into the TOTAI phase can be analytically captured with remarkable accuracy using the self-consistent Born approximation. For a larger disorder strength, the TOTAI undergoes a transition to a trivial diffusive metal, that in turn becomes an Anderson insulator at even larger disorder. Our findings show that disorder can induce third-order topological phases in 3D, therefore extending the class of known higher-order topological Anderson insulators.
What problem does this paper attempt to address?
The paper primarily explores the phenomenon and characteristics of a disorder-induced Third-order Topological Anderson Insulator (TOTAI). Specifically:
1. **Research Background**: Topological Insulators (TI) are a special class of material phases where the bulk material has a band gap, while the boundaries host gapless excitations protected by symmetry. These boundary states are robust against disorder and show potential applications in the field of quantum computing.
2. **Research Object**: This paper focuses on Third-order Topological Insulators (TOTI), particularly the disorder-induced TOTAI. This topological phase in three-dimensional space exhibits a quantized octupole moment and topologically protected corner states.
3. **Main Findings**:
- Researchers have discovered the disorder-induced TOTAI for the first time and revealed the existence of this topological phase through detailed numerical precision analysis.
- They also found that as the disorder strength increases, the system transitions from TOTAI to a trivial Diffusive Metal (DM), and further into an Anderson Insulator (AI).
- Within a certain range, the disorder-induced TOTAI phase transition can be accurately described using the Self-Consistent Born Approximation (SCBA).
4. **Theory and Methods**: To characterize the properties of different phases, the authors employed various methods, including calculations of energy gaps, density of states, localization lengths, etc., and used the Self-Consistent Born Approximation to theoretically describe the effects of disorder.
5. **Possibility of Experimental Verification**: The research results are expected to be verified through various experimental platforms in the future, such as mechanical metamaterials, circuit systems, or photonic waveguides, where the degree of disorder can be controlled.
In summary, this paper demonstrates how disorder can induce new topological phases and delves into their physical properties, providing important insights into the behavior of higher-order topological insulators.