Abstract:The topological phase in amorphous systems adds a new dimension to the topological states of matter. Here, we present an interesting phenomenon dubbed the topological Anderson amorphous insulator (TAAI). Anderson disorder can drive topologically trivial amorphous systems with structural disorders into noncrystalline topological insulators. The gap closing and reopening, spin Bott index, robust edge states, and quantized conductance characterize the Anderson disorder-induced nontrivial topology in amorphous systems. More importantly, phase diagrams are given for the topological phase transition (TPT). It is found that amorphous structural disorder and Anderson disorder are synergistic to drive the s-p band inversion of the system and hence the TPT, which is further confirmed by the effective medium theory. Our findings report a disorder-induced topological phenomenon in noncrystalline systems and shed light on the physical understanding of the interplay between the coexistence of two types of disorder effects and topology.

What problem does this paper attempt to address?

The paper primarily explores a novel phenomenon, namely the Topological Anderson Amorphous Insulator (TAAI). The core issue of the research is to investigate how an originally topologically trivial amorphous system transforms into a topological amorphous insulator in the presence of structural disorder and Anderson disorder. Specifically, the paper addresses the following key issues: 1. **Topological Transition**: Through tight-binding simulation methods, it is demonstrated that as the Anderson disorder strength increases, the energy gap first closes and then reopens. This process is accompanied by a mutation in the topological invariant—the spin Bott index, confirming the transition from a topologically trivial amorphous state to a topologically non-trivial state. 2. **Existence of Edge States**: By calculating the energy eigenvalues and wave function distribution of the amorphous system, it is shown that under the influence of Anderson disorder, edge states appear in the amorphous system. These edge states possess topological protection properties. 3. **Quantized Conductance Characteristics**: Further, through quantum transport theory, the transport properties of the amorphous system are studied. It is found that within a certain range of electron energy, the system exhibits characteristics of quantized conductance, providing direct evidence for the existence of topological amorphous insulators. 4. **Phase Diagram Analysis**: By analyzing the phase diagrams under different parameter spaces (such as structural disorder strength, Anderson disorder strength, etc.), the robustness and realization conditions of the TAAI phenomenon are revealed. The occurrence of the topological phase transition is further confirmed through effective medium theory. In summary, this paper thoroughly investigates how the synergistic effect of two types of disorder (Anderson disorder and structural disorder) drives the topological phase transition in amorphous systems. Theoretical calculations verify the emergence of topological edge states and the corresponding physical effects during this process. These findings provide a new perspective for understanding topological phenomena in amorphous materials.

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