Abstract:As extraordinary topological insulators, 2D bismuth telluride (Bi2Te3) nanosheets have been synthesized and controlled with a few-layer structure by a facile and fast solvothermal process. The detail-oriented growth evolution of 2D Bi2Te3 in an ethylene glycol reducing solution is discovered and recorded for direct observation of the liquid–solid interactions through the use of environmental SEM. At the initial synthesis stage, Te nanowires are rapidly synthesized and observed in solution. In the next stage, Bi nanoclusters slowly adhere to the Te nanowires and react to form hierarchical Te-Bi2Te3 nanostructured materials. Additionally, the Te nanowires shorten in-plane in an orderly manner, while the Bi2Te3 nanosheets exhibit directional out-of-plane epitaxial growth. In the last procedure, Bi2Te3 nanosheets with a clear hexagonal appearance can be largely obtained. Experiments performed under these rigorous conditions require careful consideration of the temperature, time, and alkaline environment for each reaction process. In addition, the yield of a wider and thinner Bi2Te3 nanosheet is synthesized by manipulating the crystal growth with an optimal alkaline concentration, which is found through statistical analysis of the AFM results. In the UV–Vis–NIR spectroscopy results, the main peak in the spectrum tends to redshift, while the other peak in the ultraviolet range decreases during Bi2Te3 nanosheet synthesis, facilitating a rapid understanding of the trends in the morphological evolution of the Bi2Te3 materials in solution. By rationalizing the above observations, we are the first to report the success of environmental SEM, HAADF-STEM, and UV–Vis–NIR spectroscopy for confirming the Bi2Te3 nanosheet formation mechanism and the physical properties in the solvent media. This research promotes the future optimization of promising Bi2Te3 nanomaterials that can be used in the fabrication of thermoelectric and topological components.

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Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Atomically smooth ultrathin films of topological insulator Sb 2 Te 3

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Epitaxial Growth of Ternary Topological Insulator Bi 2 Te 2 Se 2D Crystals on Mica.

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Growth of Topological Crystalline Insulator SnTe Thin Films on Si(111) Substrate by Molecular Beam Epitaxy

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

MOCVD synthesis of compositionally tuned topological insulator nanowires

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Topological Insulator Sb2Te3 Thin Films Grown by MBE

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Growth of Topological Insulator Bi2te3 Ultrathin Films on Si(111) Investigated by Low-Energy Electron Microscopy

Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4