Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment

Denis O. Demchenko,Mykhailo Vorobiov,Oleksandr Andrieiev,Mikhail A. Reshchikov,Benjamin MvEwen,Fatemeh Shahedipour-Sandvik

2024-04-10

Abstract:The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for theoretical calculations of point defects in semiconductors. It generally offers a satisfactory qualitative description of defect properties, including the donor/acceptor nature of defects, lowest energy charge states, thermodynamic and optical transition levels, Franck-Condon shifts, photoluminescence (PL) band shapes, and carrier capture cross sections. However, there are noticeable quantitative discrepancies in these properties when compared to experimental results. Some of these discrepancies arise from the presence of self-interaction in various parametrizations of the HSE. Other errors are due to the use of the periodic boundary conditions. In this study, we demonstrate that the error corrections scheme based on extrapolation to the dilute limit effectively eliminates the errors due to artificial electrostatic interactions of periodic images and interactions due to the defect state delocalization. This yields parametrizations of HSE that satisfy the generalized Koopmans' condition, essentially eliminating self-interaction from defect state orbitals. We apply this HSE Koopmans tuning individually to a range of cation site acceptors in GaN (Be\textsubscript{Ga}, Mg\textsubscript{Ga}, Zn\textsubscript{Ga}, Ca\textsubscript{Ga}, Cd\textsubscript{Ga}, and Hg\textsubscript{Ga}) and compare the HSE results with experimental data from PL spectra. The Koopmans-compliant HSE calculations show a significantly improved quantitative agreement with the experiment.

Materials Science

What problem does this paper attempt to address?

This paper mainly discusses the physical characteristics of acceptor defects in gallium nitride (GaN), especially the deep and shallow energy levels of cationic acceptors such as Be Ga, Mg Ga, Zn Ga, Ca Ga, Cd Ga, and Hg Ga. The authors point out that the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional method can generally provide a qualitative description of the defect properties in theory but has quantitative inconsistencies with experimental results. These inconsistencies arise from self-interaction errors and the influence of periodic boundary conditions. To address these issues, the researchers propose a scheme based on dilute limit error correction, which effectively eliminates the self-interaction of defect orbital and adjusts the HSE parameters to satisfy the generalized Koopmans condition. Using this adjusted HSE method, they study the above-mentioned cationic acceptors separately and compare the theoretical calculation results with photoluminescence (PL) spectroscopy experimental data. It is found that the predictions of HSE significantly improve the quantitative consistency with experimental data. The paper also provides a detailed introduction to the electronic properties of different acceptors, including bistability (deep states and shallow states), and discusses their importance for the development of n-type and p-type materials in GaN. By comparing the experimental and theoretical calculations of the PL spectra peaks, the researchers find that the modified HSE calculation can better explain the observed spectral features, thereby improving the accuracy of understanding acceptor defects in GaN.

Physics of acceptors in GaN: Koopmans tuned HSE hybrid functional calculations and experiment

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