Abstract:Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, and magnetic behavior of TM-SiQD. Our calculations demonstrate that Mn-doped SiQD exhibits the highest stability. The designed spin-filter device using Mn-doped SiQD shows a spin-filtering efficiency of 99.9% at 300K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for room-temperature spintronic devices.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a spin filter that is effective at room temperature for use in the field of spintronics. Specifically, the author proposes and theoretically verifies the feasibility of using silicon quantum dots (SiQD) doped with 3d transition metals (TM) as spin - filter devices. Through density functional theory (DFT) calculations, the structure, electronic properties, and magnetic behavior of TM - SiQD were studied, and it was shown that Mn - doped SiQD has the highest stability. ### Main problems 1. **Design of high - efficiency spin filter**: - The research aims to design a high - efficiency spin filter that can work at room temperature. - The spin filter can selectively allow spin - up or spin - down electrons to pass through and control their transmission or reflection. 2. **Selection and optimization of materials**: - Selecting appropriate materials and structures is the key to achieving high - efficiency spin filtering. - The paper explores the possibility of using silicon quantum dots (SiQD) doped with 3d transition metals (such as Mn, Fe, etc.) as spin filters. 3. **Room - temperature working performance**: - Traditional spin filters usually need to work at low temperatures, while the goal of this paper is to achieve high - efficiency spin filtering at room - temperature conditions. - Mn - doped SiQD exhibits a 99.9% spin - filtering efficiency and very high electrical conductivity at an electrode temperature of 300K. ### Solutions - **Theoretical calculation and simulation**: - The influence of different doping atoms (such as Mn, Fe, etc.) on SiQD was calculated using density functional theory (DFT). - The structural stability, electronic properties, and magnetic behavior of the doped SiQD were analyzed. - **Experimental feasibility**: - Considering the experimental feasibility, hydrogenated silicon quantum dots (H - SiQD) were selected as the research object. - The formation energy, total magnetic moment, and local magnetic moment of the doped H - SiQD at different doping sites were analyzed in detail. - **Spin - transport characteristics**: - The spin - dependent transport characteristics of the Au - Mn:H - SiQD - Au device were studied using the non - equilibrium Green's function (NEGF) method. - The transmission probabilities of spin - up and spin - down electrons under different bias voltages were calculated, and the spin polarization and spin - filtering efficiency were evaluated. ### Conclusion The paper shows through systematic research that Mn - doped silicon quantum dots can be used as high - efficiency spin filters at room temperature, with a spin - filtering efficiency as high as 99.9% and relatively high electrical conductivity. These results provide important theoretical basis and technical support for the future design of room - temperature spintronic devices. ### Formula summary - **Formation energy formula**: \[ E_f = E_{\text{TM:H - SiQD}} - E_{\text{H - SiQD}} - n\mu_{\text{TM}} + m\mu_{\text{Si}} \] - **Magnetic stability energy**: \[ \Delta E = E_{\text{Tup}} - E_{\text{Tsp}} \] - **Spin polarization formula**: \[ P = \frac{T_{\text{up}}}{T_{\text{up}} + T_{\text{down}}} \] - **Spin - filtering efficiency formula**: \[ \eta = \frac{T_{\text{up}}(E_F) - T_{\text{down}}(E_F)}{T_{\text{up}}(E_F) + T_{\text{down}}(E_F)} \] - **Conductance formula**: \[ G(E) = \frac{e^2}{h} (T_{\text{up}}(E) + T_{\text{down}}(E)) \] These formulas and calculation results together prove the superior performance of Mn - doped SiQD as a spin filter at room temperature.

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