Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

Prediction of Silicon-Based Room Temperature Quantum Spin Hall Insulator Via Orbital Mixing

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Room Temperature Quantum Spin Hall Insulator: Functionalized Stanene on Layered PbI2 Substrate

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Why Experiments Fail to Detect the Finite Linear Rashba Spin-Orbit Coupling of Two-Dimensional Holes in Semiconductor Quantum Wells: the Case of Ge/SiGe Quantum Wells

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Possibility Of Realizing Quantum Spin Hall Effect At Room Temperature In Stanene/Al2o3(0001)

Quantum Spin Hall Insulators in Chemically Functionalized As (110) and Sb (110) Films

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Acceptor-based qubit in silicon with tunable strain

Large-gap Quantum Spin Hall State on a Semiconductor Surface: the Orbital Filtering by Substrate

Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate

Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates

Predicting quantum spin hall effect in graphene/GaSb and normal strain-controlled band structures

Room Temperature Spin Filtering and Quantum Transport with Transition Metal-Doped Silicon Quantum Dot

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Two-dimensional arsenene oxide: A realistic large-gap quantum spin Hall insulator

Topological Rashba-like Edge States in Large-Gap Quantum Spin Hall Insulators