Abstract:Abstract Ferromagnetic (FM) half-metals have been regarded as the most promising candidates for spin injection into semiconductors due to their completely spin-polarized electronic states around the Fermi level. To explore the potential application of Cr 3 M 4 (M = Se, Te) in spintronic devices, which are experimentally synthesized FM bulks as well as half-metallic monolayers with high Curie temperature, we propose to design a Bi 2 Se 3 /Cr 3 Se 4 van der Waals hetero-junction and a 2D Cr 3 S 4 /Cr 3 Te 4 hetero-junction motivated by the recent report on controlling synthesis of Cr x M y based heterostructures. First-principles calculations combined with non-equilibrium Green’s function uncover the perfect spin filtering and spin diode effect in Bi 2 Se 3 /Cr 3 Se 4 van der Waals hetero-junction. More interestingly, the Cr 3 S 4 /Cr 3 Te 4 hetero-junction shows an excellent spin-dependent Seebeck effect, in which spin-dependent currents with opposite spin orientation can be driven by a temperature gradient to flow in the opposite transport direction. These effects can be understood from the calculated spin-dependent band structures and transmission spectrum. Our results put forward a promising designing and application of spintronic devices based on Cr 3 M 4 (M = Se, Te) FM materials.

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