Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Quest for a solution to drift in phase change memory devices

Drift of Schottky Barrier Height in Phase Change Materials

Unveiling the Structural Origin to Control Resistance Drift in Phase-Change Memory Materials

Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory

Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory

Understanding Phase-Change Materials with Unexpectedly Low Resistance Drift for Phase-Change Memories

Measurement of onset of structural relaxation in melt-quenched phase change materials

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Structural relaxation of amorphous phase change materials at room temperature

Chemical Understanding of Resistance Drift Suppression in Ge–Sn–Te Phase-Change Memory Materials

Resistance Drift Suppression Utilizing GeTe/Sb2Te3 Superlattice‐Like Phase‐Change Materials

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Relation between resistance drift and optical gap in phase change materials

Microstructure characterization, phase transition, and device application of phase-change memory materials

Phase change memory technology

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Nucleation Dynamics of Phase‐Change Memory Materials: Atomic Motion and Property Evolution

An overview of phase-change memory device physics

Effect of Scaling on Thermal Properties and Switching Operation of Phase Change Memory Devices

Exploiting nanoscale effects in phase change memories