An overview of phase-change memory device physics

Manuel Le Gallo,Abu Sebastian

DOI: https://doi.org/10.1088/1361-6463/ab7794

2020-03-30

Abstract:Phase-change memory (PCM) is an emerging non-volatile memory technology that has recently been commercialized as storage-class memory in a computer system. PCM is also being explored for non-von Neumann computing such as in-memory computing and neuromorphic computing. Although the device physics related to the operation of PCM have been widely studied since its discovery in the 1960s, there are still several open questions relating to their electrical, thermal, and structural dynamics. In this article, we provide an overview of the current understanding of the main PCM device physics that underlie the read and write operations. We present both experimental characterization of the various properties investigated in nanoscale PCM devices as well as physics-based modeling efforts. Finally, we provide an outlook on some remaining open questions and possible future research directions.

physics, applied

What problem does this paper attempt to address?

The problems that this paper attempts to solve are several key issues in the device physics of phase - change memory (PCM). Although the device physics of phase - change memory has been extensively studied since the discovery of phase - change materials in the 1960s, there are still some unresolved problems, especially in its electrical, thermal and structural dynamics. These problems are crucial for optimizing phase - change memory technology, especially when it is used in emerging applications such as non - von Neumann computing (such as in - memory computing and neuromorphic computing). Specifically, the paper aims to:

1. **Summarize the current understanding of the basic working principles of phase - change memory**: including the physical mechanisms behind read and write operations.
2. **Experimental characterization**: introduce experimental studies on various properties of nanoscale phase - change memory devices.
3. **Physical modeling**: show physics - based modeling efforts to better understand the working mechanisms of phase - change memory.
4. **Look forward to future research directions**: discuss some remaining problems and propose possible future research directions.

Through these contents, the paper hopes to provide a theoretical basis for the further optimization of phase - change memory technology and explore its potential applications in emerging computing fields.