Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure

J. P. McCandless,C. A. Gorsak,V. Protasenko,D. G. Schlom,Michael O. Thompson,H. G. Xing,D. Jena,H. P. Nair

2023-12-12

Abstract:Here we report that the source of Si impurities commonly observed on (010) $\beta-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $\beta-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth.

Applied Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the accumulation of Si impurities on the surface of β -Ga₂O₃ substrates when exposed to air and its impact on device performance. Specifically, the research focuses on the following aspects:

1. **Source of Si impurities**: Determine whether the main source of Si impurities is siloxanes in the air and how these impurities affect the surface properties of β -Ga₂O₃ substrates.

2. **Methods for removing Si impurities**: Explore whether treatment with 49% hydrofluoric acid (HF) can effectively reduce or remove Si impurities and evaluate the effects of different treatment times.

3. **Impact of Si impurities on device performance**: Analyze how the presence of Si impurities leads to the formation of parallel conduction channels, thereby affecting the electrical performance of field - effect transistors (FETs), especially high reverse leakage current and low electron mobility.

4. **Impact of HF treatment on subsequent growth**: Evaluate the impact of HF treatment on the growth quality of β -Ga₂O₃ epitaxial layers to ensure that this treatment does not have a negative impact on the crystal structure or surface morphology.

Through these studies, the author hopes to find an effective method to control and reduce the accumulation of Si impurities, thereby improving the performance of β -Ga₂O₃ - based electronic devices.