Abstract:Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a new technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a new spectroscopy method to extract the defects' energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only about 3% are identified as strongly coupled defects which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

A gate tunable transmon qubit in planar Ge

Gatemon Qubit Revisited for Improved Reliability and Stability

Anharmonicity of a Gatemon Qubit with a Few-Mode Josephson Junction

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

Gatemon Benchmarking and Two-Qubit Operations

Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire

Measurement of Quality Factor and Losses in Superconducting Microwave Resonator Integrated with Nbn/Aln/Nbn Qubit Circuit

Mitigating Losses of Superconducting Qubits Strongly Coupled to Defect Modes

Gatemon qubit on a germanium quantum-well heterostructure

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

Wiring surface loss of a superconducting transmon qubit

Superconducting Quantum Circuits Based on 2D Materials

Electric field spectroscopy of material defects in transmon qubits

Substrate and process dependent losses in superconducting thin film resonators

The gatemon: a transmon with a voltage-variable superconductor-semiconductor junction

Gate-controlled near-surface Josephson junctions

Coherent control of a few-channel hole type gatemon qubit

Non-Markovian dynamics of a superconducting qubit in a phononic bandgap