Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Albert Hertel,Michaela Eichinger,Laurits O. Andersen,David M.T. van Zanten,Sangeeth Kallatt,Pasquale Scarlino,Anders Kringhøj,José M. Chavez-Garcia,Geoffrey C. Gardner,Sergei Gronin,Michael J. Manfra,András Gyenis,Morten Kjaergaard,Charles M. Marcus,and Karl D. Petersson
DOI: https://doi.org/10.1103/PhysRevApplied.18.034042
IF: 4.6
2022-09-17
Physical Review Applied
Abstract:We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2×105 can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T1≈700ns , and dephasing times, T2∗≈20ns and T2,echo≈1.3μs . Further, we infer a high junction transparency of 0.4 – 0.9 from an analysis of the qubit anharmonicity. https://doi.org/10.1103/PhysRevApplied.18.034042 © 2022 American Physical Society
physics, applied
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