Abstract:Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.

What problem does this paper attempt to address?

### Problems the Paper Aims to Solve This paper aims to demonstrate a gate-tunable superconducting-semiconductor qubit (gatemon) based on planar germanium (Ge) material. Specifically, the research team achieved this qubit by inducing superconductivity in a 2D hole gas and integrating it into an Xmon circuit. The paper mainly focuses on the following aspects: 1. **Broadband Frequency Tunability**: The research demonstrates that this qubit has good tunability over a wide frequency range, making it an important component in hybrid quantum circuits. 2. **Coherence and Energy Relaxation Time**: Through time-domain characterization, the research team measured the qubit's energy relaxation time and coherence time, finding that these times can reach 75 nanoseconds. 3. **Comparison with Existing Technologies**: The paper compares this Ge-based gatemon with traditional fixed-frequency superconducting qubits to evaluate its performance and potential applications. ### Background and Motivation In recent years, hybrid quantum circuits (circuits combining different physical paradigms) have received widespread attention for their novel functionalities. In particular, hybrid qubits combining superconductors and semiconductors can leverage the mature technology of superconducting quantum circuits and the inherent tunability of semiconductors. Gate-tunable superconducting-semiconductor qubits (gatemons) are one of the representatives in this field. However, realizing such hybrid qubits faces multiple challenges, including: - **Material Selection**: The need for substrate materials with low microwave loss, transparent semiconductor-superconductor interfaces, and materials without nuclear spins to optimize spin qubit operations. - **Performance Optimization**: How to achieve broadband frequency tunability while maintaining high coherence and long relaxation times. ### Research Methods The research team adopted the following methods to realize and characterize the planar Ge-based gatemon: 1. **Material Preparation**: Inducing superconductivity in a 2D hole gas by evaporating an aluminum layer on a thin spacer layer. 2. **Device Design**: Integrating the Josephson junction into an Xmon circuit and coupling it capacitively to a transmission line resonator. 3. **Characterization Techniques**: Using cavity spectroscopy, two-tone spectroscopy, and time-domain characterization techniques to measure the qubit's frequency tunability, energy relaxation time, and coherence time. ### Main Results 1. **Frequency Tunability**: The gatemon exhibited quasi-linear frequency dispersion over a range of approximately 5 GHz. 2. **Coherence and Relaxation Time**: Measurement results showed that the qubit's energy relaxation time (T1) varied between 80 nanoseconds and 20 nanoseconds, while the coherence time (T2*) showed no obvious trend. 3. **Comparison with Traditional Qubits**: Comparison with traditional fixed-frequency superconducting qubits indicated that the Ge-based gatemon performed better in some aspects but still had room for improvement in others. ### Conclusion This study demonstrates the feasibility of gate-tunable superconducting-semiconductor qubits based on planar Ge, laying the foundation for their application in hybrid quantum circuits. Future research will further optimize materials and device designs to improve their performance and stability.

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