Abstract:Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high density of randomly distributed twin defects and stacking faults, which result in an uncontrolled and non-uniform InAs-Al interface. Furthermore, this type of disorder can create potential inhomogeneity in the wire, destroy the topological gap, and form trivial sub-gap states mimicking MZM in transport experiments. Further study shows that reducing the InAs nanowire diameter from growth can significantly suppress the formation of these defects and stacking faults. Here, we demonstrate the in situ growth of ultra-thin InAs nanowires with epitaxial Al film by molecular-beam epitaxy. Our InAs diameter (~ 30 nm) is only one-third of the diameters (~ 100 nm) commonly used in literatures. The ultra-thin InAs nanowires are pure phase crystals for various different growth directions, suggesting a low level of disorder. Transmission electron microscopy confirms an atomically sharp and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and $2e^-$ periodic Coulomb blockade at zero magnetic field, a necessary step for future MZM experiments. A large zero bias conductance peak with a peak height reaching 80% of $2e^2/h$ is observed.

Gatemon Qubit Based on a Thin InAs-Al Hybrid Nanowire

Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Anharmonicity of a Gatemon Qubit with a Few-Mode Josephson Junction

The gatemon: a transmon with a voltage-variable superconductor-semiconductor junction

Hole-type superconducting gatemon qubit based on Ge/Si core/shell nanowires

Gatemon qubit on a germanium quantum-well heterostructure

A gate tunable transmon qubit in planar Ge

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

Gatemon Benchmarking and Two-Qubit Operations

Superconducting gatemon qubit based on a proximitized two-dimensional electron gas

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Coherent control of a few-channel hole type gatemon qubit

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

Gate-switchable SQUID Based on Dirac Semimetal Cd3As2 Nanowires

In situ tuning of dynamical Coulomb blockade in hybrid nanowire devices

Gatemonium: A Voltage-Tunable Fluxonium

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing

Realization of superconducting transmon qubits based on topological insulator nanowires

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots