Abstract:High spin-orbit coupling and low effective mass of electrons in InAs nanowires makes it an attractive material for studying quantum physics in mesoscopic and nanoscale quantum devices. We first study the transport properties of FET devices made of InAs nanowires of diameter in the range of 35-70 nm. The temperature dependence of electron mobility in InAs nanowires from 10-200 K exhibits a positive slope below approximately 40 K, then turns over to a negative slope at higher temperatures. This is explained by Coulomb scattering from the surface donor like states that give rise to a subsurface accumulation layer and the thermal activation of these surface donors. The scattering rates are calculated using a momentum relaxation time approximation. The transition probabilities between the self-consistent Poisson-Schrödinger states of a 50 nm diameter nanowire are calculated using Fermi’s golden rule. The results clarify the dominant scattering mechanism in InAs nanowires and signify the need for surface passivation to obtain high mobility devices. In a second study, we model a gate defined double quantum dot in the nanowire with high spin-orbit coupling in order to determine the precise gate voltage dependence of the exchange Hamiltonian. This modelling is critical for designing two-qubit quantum logic operations in the nanowire double dot architecture. A quantum double well structure is simulated based on the realistic potential created by a set of fine local electrostatic gates in the presence of nanowire surface accumulation layer. An effective spin Hamiltonian is derived for a pair of interacting electrons localized in the double dot system in the presence of a strong spin-orbit coupling. The accuracy of the effective Hamiltonian is established by a strong agreement obtained between the dynamics generated by the effective Hamiltonian with those obtained by a numerically exact solution of the time-dependent Schrödinger equation. The parametric dependences of the effective exchange Hamiltonian on external magnetic field, barrier gate voltage, and spin-orbit field is determined. This opens the door to designing optimal pulses for high fidelity quantum gates in real InAs nanowire devices.

In situ tuning of dynamical Coulomb blockade in hybrid nanowire devices

In situ tuning of dynamical Coulomb blockade on Andreev bound states in hybrid nanowire devices

Suppressing Andreev Bound State Zero Bias Peaks Using a Strongly Dissipative Lead

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Large Zero Bias Peaks and Dips in a Four-Terminal Thin InAs-Al Nanowire Device

Coulomb blockade in open superconducting islands on InAs nanowires

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Majorana-like Coulomb spectroscopy in the absence of zero bias peaks

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices

Crossover from Coulomb Blockade to Ballistic Transport in InAs Nanowire Devices

Numerical studies of transport and anisotropic exchange interaction in InAs nanowires

Scaling of sub-gap excitations in a superconductor-semiconductor nanowire quantum dot

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Gate Tunable Parallel Double Quantum Dots in InAs Double-Nanowire Devices

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube P-N Junction.

Electric field tunable superconductor-semiconductor coupling in Majorana nanowires

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Gate-tuned Aharonov-Bohm Interference of Surface States in a Quasi-Ballistic Dirac Semimetal Nanowire