Abstract:Quantum bits (qubits) with long coherence times are an important element for the implementation of medium- and large-scale quantum computers. In the case of superconducting planar qubits, understanding and improving qubits' quality can be achieved by studying superconducting planar resonators. In this Paper, we fabricate and characterize coplanar waveguide resonators made from aluminum thin films deposited on silicon substrates. We perform three different substrate treatments prior to aluminum deposition: One chemical treatment based on a hydrofluoric acid clean, one physical treatment consisting of a thermal annealing at 880 degree Celsius in high vacuum, one combined treatment comprising both the chemical and the physical treatments. We first characterize the fabricated samples through cross-sectional tunneling electron microscopy acquiring electron energy loss spectroscopy maps of the samples' cross sections. These measurements show that both the chemical and the physical treatments almost entirely remove native silicon oxide from the substrate surface and that their combination results in the cleanest interface. We then study the quality of the resonators by means of microwave measurements in the "quantum regime", i.e., at a temperature T~10 mK and at a mean microwave photon number $\langle n_{\textrm{ph}} \rangle \sim 1$. In this regime, we find that both surface treatments independently improve the resonator's intrinsic quality factor and that the highest quality factor is obtained for the combined treatment, $Q_{\textrm{i}} \sim 0.8$ million. Finally, we find that the TLS quality factor averaged over a time period of 3 h is $\sim 3$ million at $\langle n_{\textrm{ph}} \rangle \sim 10$, indicating that substrate surface engineering can potentially reduce the TLS loss below other losses such as quasiparticle and vortex loss.

Substrate and process dependent losses in superconducting thin film resonators

Measurement of Quality Factor and Losses in Superconducting Microwave Resonator Integrated with Nbn/Aln/Nbn Qubit Circuit

Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging

High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices

Determining interface dielectric losses in superconducting coplanar waveguide resonators

Loss mechanisms in superconducting thin film microwave resonators

Loss Dependence on Geometry and Applied Power in Superconducting Coplanar Resonators

Analysis and mitigation of interface losses in trenched superconducting coplanar waveguide resonators

Materials loss measurements using superconducting microwave resonators

Phononic loss in superconducting resonators on piezoelectric substrates

Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

Substrate surface engineering for high-quality silicon/aluminum superconducting resonators

Power and temperature dependent model for High Q superconductors

Identification and Mitigation of Conducting Package Losses for Quantum Superconducting Devices

Modelling dielectric loss in superconducting resonators: Evidence for interacting atomic two-level systems at the Nb/oxide interface

Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

Geometric Scaling of Two-Level-System Loss in Superconducting Resonators

Surface Passivation of Niobium Superconducting Quantum Circuits Using Self-Assembled Monolayers