Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

A Reference-less Slope Detection Technique in 65nm for Robust Sensing of 1T1R Arrays

Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

High Speed and Low Power Sensing Schemes for STT-MRAM with IPMTJs

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories

Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory

A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection

Sneak-path Based Test and Diagnosis for 1R RRAM Crossbar Using Voltage Bias Technique

Survey on STT-MRAM Testing: Failure Mechanisms, Fault Models, and Tests

RAM and TCAM Designs by Using STT-MRAM