Abstract:Memristor array stack is studied to mitigate sneak path current and forming operation problems at the device level. Ultimately, representative configuration is examined by introducing the latest research on one diode‐one RRAM (1D1R), one selector‐one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self‐rectifying cell (SRC), charge trap memory (CTM) and their applications. Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI and neuromorphic computing. Prior research on optimizing memristors in next‐generation devices has generally indicated that emerging arrays and vertical structures can improve memory density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current and forming processes from the initial device in array structure operation at the device level, have limited the development of array‐based memristor devices for further progressing circuits and integrated design. In this paper, memristor array studies are examined that have suggested solutions for sneak path current and forming operation problems at the device level. Ultimately, representative solutions are proposed to progress memristors into array structures by introducing the latest research on one diode‐one RRAM (1D1R), one selector‐one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self‐rectifying cell (SRC), charge trap memory (CTM) and their applications. Additionally, essential details demonstrating the practical implementation of these devices in crossbar array memory are investigated. Finally, the advantages and perspectives of these array‐based memristor solutions are summarized.

Sneak-path Based Test and Diagnosis for 1R RRAM Crossbar Using Voltage Bias Technique

Testing of 1tnr RRAM Array with Sneak Path Technique

Sneak-path based test for 3D stacked one-transistor-N-RRAM array

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Statistical assessment methodology for the design and optimization of cross-point RRAM arrays

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Variation-aware, Reliability-Emphasized Design and Optimization of RRAM Using SPICE Model

One-Step Sneak-Path Free Read Scheme for Resistive Crossbar Memory

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

Across-Array Coding for Resistive Memories with Sneak-Path Interference and Lognormal Distributed Resistance Variations

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Multi-Bit Read and Write Methodologies for Diode-STTRAM Crossbar Array

A High-Speed and High-Efficiency Diverse Error Margin Write-Verify Scheme for an RRAM-Based Neuromorphic Hardware Accelerator

A Novel Read Circuit for RRAM Based on RC Delay Effect

Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability

Probabilistic design methodology to improve run-time stability and performance of STT-RAM caches

Accelerator-friendly neural-network training: Learning variations and defects in RRAM crossbar.