Abstract:Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al.

Multi-Bit Read and Write Methodologies for Diode-STTRAM Crossbar Array

Crossbar architecture based on 2R complementary resistive switching memory cell

Design and Analysis of Crossbar Architecture Based on Complementary Resistive Switching Non-Volatile Memory Cells.

Read Operation Performance of Large Selectorless Cross-Point Array with Self-Rectifying Memristive Device

Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage

Future Large-Scale Memristive Device Crossbar Arrays: Limits Imposed by Sneak-Path Currents on Read Operations.

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

Progress in Rectifying-Based RRAM Passive Crossbar Array

Highly Parallel Writing Strategy Based on Diagonal-Gates-Connection 1T1R Arrays

Area and Energy Efficient Short-Circuit-Logic-Based STT-MRAM Crossbar Array for Binary Neural Networks

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing

Application of twin-bit self-rectifying via RRAM with unique diode state in cross-bar arrays by advanced CMOS Cu BEOL process

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

A Complementary Resistive Switch-based Crossbar Array Adder

Impact of resistive switching parameters on resistive random access memory crossbar arrays

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Sneak-path Based Test and Diagnosis for 1R RRAM Crossbar Using Voltage Bias Technique

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM

Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes