Abstract:Memristor array stack is studied to mitigate sneak path current and forming operation problems at the device level. Ultimately, representative configuration is examined by introducing the latest research on one diode‐one RRAM (1D1R), one selector‐one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self‐rectifying cell (SRC), charge trap memory (CTM) and their applications. Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI and neuromorphic computing. Prior research on optimizing memristors in next‐generation devices has generally indicated that emerging arrays and vertical structures can improve memory density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current and forming processes from the initial device in array structure operation at the device level, have limited the development of array‐based memristor devices for further progressing circuits and integrated design. In this paper, memristor array studies are examined that have suggested solutions for sneak path current and forming operation problems at the device level. Ultimately, representative solutions are proposed to progress memristors into array structures by introducing the latest research on one diode‐one RRAM (1D1R), one selector‐one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self‐rectifying cell (SRC), charge trap memory (CTM) and their applications. Additionally, essential details demonstrating the practical implementation of these devices in crossbar array memory are investigated. Finally, the advantages and perspectives of these array‐based memristor solutions are summarized.

Future Large-Scale Memristive Device Crossbar Arrays: Limits Imposed by Sneak-Path Currents on Read Operations.

Read Operation Performance of Large Selectorless Cross-Point Array with Self-Rectifying Memristive Device

Modeling and Analysis of a Large-Scale Memristor Crossbar Array for Neuromorphic Chip

Memristive Crossbar Arrays for Storage and Computing Applications

Self-rectifying Memristors with High Rectification Ratio and Dynamic Linearity for In-Memory Computing

Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current

Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

A Multi-Value 3D Crossbar Array Nonvolatile Memory Based on Pure Memristors

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.

Impact of sneak paths on in-memory logic design in memristive crossbars

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension

Efficient Evaluation Model Including Interconnect Resistance Effect for Large Scale RRAM Crossbar Array Matrix Computing

A new crossbar architecture based on two serial memristors with threshold

4K-Memristor Analog-Grade Passive Crossbar Circuit

Design of Heterogeneous Memristor Based 1T2M Multi-value Memory Crossbar Array

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension

Progress in Rectifying-Based RRAM Passive Crossbar Array

Crossbar architecture based on 2R complementary resistive switching memory cell