Abstract:Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoelectronic devices operating in the visible and ultraviolet spectral range. However, the growth of high quality samples is challenging and B atom clustering is often observed in (B,Ga)N alloys. To date, fundamental understanding of the impact of such clustering on electronic and optical properties of these alloys is sparse. In this work we employ density functional theory (DFT) in the framework of the meta generalized gradient approximation (modified Becke Johnson (mBJ) functional) to provide insight into this question. We use mBJ DFT calculations, benchmarked against state-of-the-art hybrid functional DFT, on (B,Ga)N alloys in the experimentally relevant B content range of up to 7.4%. Our results reveal that B atom clustering can lead to a strong reduction in the bandgap of such an alloy, in contrast to alloy configurations where B atoms are not forming clusters, thus not sharing nitrogen (N) atoms. We find that the reduction in bandgap is linked mainly to carrier localization effects in the valence band, which stem from local strain and polarization field effects. However, our study also reveals that the alloy microstructure of a B atom cluster plays an important role: B atom chains along the wurtzite c-axis impact the electronic structure far less strongly when compared to a chain formed within the c-plane. This effect is again linked to local polarization field effects and the orbital character of the involved valence states in wurtzite BN and GaN. Overall, our calculations show that controlling the alloy microstructure of (B,Ga)N alloys is of central importance when it comes to utilizing these systems in future optoelectronic devices with improved efficiencies.

Electron Paramagnetic Resonance of $V_{N}-V_{Ga}$ complex in $BGaN$

Resonant Raman Scattering in Boron-Implanted GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR

Electronic and optical properties of boron containing GaN alloys: The role boron atom clustering

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Photoluminescence Spectroscopy of Band Gap Shrinkage in GaN

Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature

The effects of low boron incorporation on the structural and optical properties of BxGa1−xN/SiC epitaxial layers

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

The sign of electron g-factor in GaAs(1-x)N(x) measured by using the Hanle effect

Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation

Non-Equilibrium Acceptor Concentration in Gan : Mg Grown by Metalorganic Chemical Vapor Deposition

Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Optical properties of GaN film grown by metalorganic chemical vapor deposition

Valence Band Offset of Β-Ga2o3/wurtzite GaN Heterostructure Measured by X-ray Photoelectron Spectroscopy.

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

An Introduction to the Worldline Technique for Quantum Field Theory Calculations

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions