Abstract:Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifter with a ferroelectric field-effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non-volatile phase shifts up to 1.25{\pi} are obtained with CMOS-compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non-volatile phase shifters in large-scale PICs and its feasibility is verified by confirming the selective write-in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large-scale non-volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to realize a non - volatile optical phase modulator on a photonic integrated circuit. Specifically, the paper proposes a III - V/Si hybrid metal - oxide - semiconductor (MOS) phase modulator driven by a ferroelectric field - effect transistor (FeFET). This modulator can retain its phase information after power - off, thereby achieving low - power static operation. In addition, the paper also proposes a cross - bar array architecture to simplify the control of non - volatile phase modulators in large - scale photonic integrated circuits, which is of great significance for future large - scale programmable photonic integrated circuits (such as applications in deep learning and quantum computing). The key innovation points of the paper are as follows: 1. **Non - volatile phase modulation**: By using FeFET to drive the phase modulator, non - volatile phase modulation is achieved, which can retain phase information after power - off and significantly reduce the power consumption of static operation. 2. **CMOS compatibility**: The proposed scheme can operate at CMOS - compatible operating voltages and has a low switching energy (up to 3.3 nJ), making it more suitable for large - scale integration. 3. **Multistate operation**: By adjusting the polarization state of FeFET, multistate non - volatile phase modulation can be achieved, and the maximum phase modulation range reaches 1.25π. 4. **Cross - bar array architecture**: A cross - bar array architecture is proposed, which can simplify the control of non - volatile phase modulators in large - scale photonic integrated circuits, thus paving the way for the realization of large - scale programmable photonic integrated circuits. These innovation points jointly solve the problems of high power consumption, volatility and control complexity existing in current phase modulators in photonic integrated circuits, and provide new solutions for future high - performance photonic computing applications.

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