Fast and energy-efficient non-volatile III-V-on-silicon photonic phase shifter based on memristors

Zhuoran Fang,Bassem Tossoun,Antoine Descos,Di Liang,Xue Huang,Geza Kurczveil,Arka Majumdar,Raymond G. Beausoleil

2023-05-24

Abstract:Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently, programmable silicon photonics has also found new applications in quantum2 and classical 3 information processing. A key component of programmable silicon photonic integrated circuits (PICs) is the phase shifter, traditionally realized via the thermo-optic or plasma dispersion effect which are weak, volatile, and power hungry. A non-volatile phase shifter can circumvent these limitations by requiring zero power to maintain the switched phases. Previously non-volatile phase modulation was achieved via phase-change4 or ferroelectric materials5, but the switching energy remains high (pico to nano joules) and the speed is slow (micro to milli seconds). Here, we report a non-volatile III-V-on-silicon photonic phase shifter based on HfO2 memristor with sub-pJ switching energy (~400fJ), representing over an order of magnitude improvement in energy efficiency compared to the state of the art. The non-volatile phase shifter can be switched reversibly using a single 100ns pulse and exhibits an excellent endurance over 800 cycles. This technology can enable future energy-efficient programmable PICs for data centers, optical neural networks, and quantum information processing.

Optics,Applied Physics

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a fast, low - power - consumption and non - volatile III - V - on - silicon photonic phase shifter. Traditional phase shifters are usually implemented based on the thermo - optic effect or the plasma dispersion effect, and these methods have problems such as weak effect, volatility and high power consumption. To overcome these limitations, the paper proposes a non - volatile phase shifter based on HfO₂ memristors. This phase shifter has the following characteristics: 1. **Low power consumption**: The phase shifter reported in the paper has a switching energy of sub - picojoule (~400 fJ), which improves the energy efficiency by more than an order of magnitude compared with the existing technology. 2. **Fast response**: The phase shifter can complete the switching under a single 100 - nanosecond pulse and shows good durability and can perform more than 800 cycles. 3. **Non - volatility**: The switched - phase state can be maintained without continuous power, which is very important for the application of programmable photonic integrated circuits (PICs). Through these improvements, the paper aims to promote the development of future high - efficiency programmable photonic integrated circuits, especially in applications in data centers, optical neural networks and quantum information processing.

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