Abstract:A non-volatile optical phase shifter is a critical component for enabling large-scale, energy-efficient programmable photonic integrated circuits (PICs) on a silicon (Si) photonics platform. While ferroelectric materials like BaTiO3 offer non-volatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor (CMOS) fabs is limited. Hence, the search for a novel CMOS-compatible ferroelectric material for non-volatile optical phase shifting in Si photonics is of utmost importance. Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. Although extensively studied for ferroelectric transistors and memories, its application in photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric HZO deposited on a SiN optical waveguide. We observed a negative change in refractive index at a 1.55 um wavelength in the pristine device regardless of the direction of an applied electric filed. We achieved approximately pi phase shift in a 4.5-mm-long device with negligible optical loss. The non-volatile multi-level optical phase shift was confirmed with a persistence of > 10000 s. This phase shift can be attributed to the spontaneous polarization within the HZO film along the external electric field. We anticipate that our results will stimulate further research on optical nonlinear effects, such as the Pockels effect, in ferroelectric HZO. This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based programmable PICs are poised to become indispensable in diverse applications, ranging from optical fiber communication and artificial intelligence to quantum computing and sensing.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to realize a non - volatile optical phase shifter on the silicon photonics platform to promote the development of large - scale, low - energy - consuming Programmable Photonic Integrated Circuits (PICs). Although the existing thermo - optic (TO) phase shifters have a simple structure and are easy to integrate, their high power consumption limits the application of large - scale integration. In addition, although ferroelectric materials such as barium titanate (BaTiO₃) can provide non - volatile optical phase - shifting capabilities, they are difficult to manufacture on CMOS production lines due to incompatibility with the complementary metal - oxide - semiconductor (CMOS) process. Therefore, researchers have been looking for a new ferroelectric material that is compatible with the CMOS process to achieve non - volatile optical phase shifting. Hafnium zirconium oxide (Hf₀.₅Zr₀.₅O₂, HZO) is a new ferroelectric material discovered in 2011 and is characterized by being compatible with the CMOS process because it utilizes the high - dielectric - constant HfO₂ material, which is widely used in CMOS transistors. Although the applications of HZO in ferroelectric transistors and memories have been widely studied, its applications in the field of photonics are still less explored. In this study, the authors demonstrated optical phase shifting achieved by depositing a ferroelectric HZO thin film on a silicon nitride (SiN) optical waveguide. The experimental results show that at a wavelength of 1.55 μm, the refractive index of the device changes negatively regardless of the direction of the applied external electric field. In a 4.5 - millimeter - long device, a phase shift of approximately π is achieved with almost no optical loss. Non - volatile multi - level optical phase shifting has been confirmed, lasting for more than 10⁴ seconds. These results pave the way for large - scale integration of optical phase shifters using CMOS - compatible processes on 300 - millimeter - diameter silicon wafers, and also provide a basis for further research on optical nonlinear effects in ferroelectric HZO, such as the Pockels effect. This progress is expected to promote the development of various devices such as high - speed optical modulators, thereby playing an important role in fields such as optical fiber communication, artificial intelligence, quantum computing, and sensing.

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