Abstract:We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver filters. The MZI optical memristor exhibits non-volatile optical phase shifts $> \pi (\Delta n_{g} > 2.70 \times 10^{-3}$) with ~ 30 dB extinction ratio while consuming 0 electrical power consumption in a true "set-and-forget" operation. We demonstrate 6 non-volatile states with each state capable of 4 Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and most likely beyond. To the best of our knowledge, we have demonstrated for the first time, non-volatile III-V/Si optical memristors with the largest electric-field driven phase shifts and reconfigurable filters with the lowest power consumption.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the von - Neumann bottleneck in the current computer architecture, that is, the bandwidth limitation and high - power consumption problems when data is transmitted between the processor and memory. Specifically, the paper proposes a non - volatile photonic memory based on III - V/Si materials. By embedding multi - layer HfO₂/Al₂O₃ memristors into the III - V/Si photonic system, non - volatile optical functions of various devices such as Mach - Zehnder interferometers (MZI) and (de)interleaving filters are achieved. This method can not only achieve high - speed data processing and training with low power consumption, but also provide non - volatile optical memory functions for the inference stage, thereby breaking through the limitations of the traditional von - Neumann architecture. ### Main Contributions 1. **Non - volatile Optical Phase Shift**: The paper shows that the III - V/Si MZI memristor can achieve a non - volatile optical phase shift greater than π (Δn_gIII - V/Si = 2.70 × 10⁻³), with an extinction ratio of about 30 dB, and does not consume electrical energy in a true "set - and - forget" operation. 2. **Multi - state Non - volatile Memory**: Six non - volatile states are shown in the study, and each state can support a modulation speed of 4 Gbps. 3. **Non - volatile Filter**: The III - V/Si (de)interleaver also shows non - volatile pass - band conversion with complete set/reset states. 4. **Long - time Non - volatility**: Time - duration tests on all devices show that non - volatility can last for more than 24 hours. 5. **Post - fabrication Error Correction**: The non - volatile optical memory function allows error correction of phase - sensitive silicon photonic devices in the post - fabrication stage without consuming power. ### Technical Details - **Materials and Structures**: A 300 - nm - thick p - type Si (doping concentration is 5×10¹⁷ cm⁻³), multi - layer HfO₂/Al₂O₃, and a 150 - nm - thick n - type GaAs (doping concentration is 3×10¹⁸ cm⁻³) are used. - **Working Principles**: Oxygen vacancies (VO₂⁺) are formed through the "set" process, thereby establishing a conductive path at HfO₂, Al₂O₃ and their interfaces, changing the high - resistance state to a low - resistance state; the "reset" process destroys the conductive path through Joule heating and field effects to restore the high - resistance state. - **Application Prospects**: This non - volatile photonic memristor is expected to be applied to neuromorphic/brain - inspired optical networks, optical switching structures, optical phased arrays, quantum networks, and future optical computing architectures. ### Conclusion The paper provides a new solution to break through the von - Neumann bottleneck by showing the non - volatile photonic memristor based on III - V/Si materials. These memristors not only achieve high - speed data processing and training with low power consumption, but also can provide non - volatile optical memory functions in the inference stage, laying the foundation for next - generation optical communication and optical computing applications.

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