Abstract:We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice filters, and ring resonator filters. The MZI CTM exhibits full write/erase operation (100 cycles with 500 states) with wavelength shifts of $\Delta\lambda_{non-volatile} = 1.16 nm$ ($\Delta n_{eff,non-volatile} ~ 2.5 \times 10^{-4}$) and a dynamic power consumption $<$ 20 pW (limited by measurement). Multi-bit write operation (2 bits) is also demonstrated and verified over a time duration of 24 hours and most likely beyond. The cascaded 2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB compared to the MZI and wavelength shifts of $\Delta\lambda_{non-volatile} = 0.041 nm$ ($\Delta n_{eff, non-volatile} = 1.5 \times 10^{-4}$) with similar pW-level dynamic power consumption as the MZI CTM. The ability to co-locate photonic computing elements and non-volatile memory provides an attractive path towards eliminating the von-Neumann bottleneck.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to realize a non - volatile heterogeneous III - V/Si photonics platform and enhance the co - localization ability of photonic computing elements and non - volatile storage through optical charge - trap memory (CTM). Specifically, the paper aims to solve the following problems: 1. **Energy - efficiency and speed bottlenecks in data - intensive applications**: With the increase in data and graph analysis applications in data centers and high - performance computing, the traditional von Neumann architecture faces limitations in energy - efficiency and speed when handling these data - intensive tasks. The paper proposes that non - volatile photonics technology can significantly improve energy - efficiency and processing speed, thus solving this bottleneck. 2. **Key technical challenges of photonic neural networks (ONN)**: - **Monolithic integration problem**: Currently, there is a lack of device platforms that can integrate optical neurons, lasers, photodetectors, electrical neural circuits, optical non - linear activation functions, synaptic interconnections, and memories on the same silicon platform. - **Power consumption problem**: Optical weighting operations through thermal heaters consume relatively high power, usually requiring tens of milliwatts of power per heater. - **Optical storage problem**: There is a lack of optical storage solutions that can reduce the communication delay between ONN and memory. 3. **Limitations of existing non - volatile storage technologies**: Existing non - volatile storage technologies such as phase - change memory (PCM), micro - electro - mechanical systems (MEMS), ferroelectric materials, floating - gate memory (FGM), and memristors have performance and manufacturing challenges, which limit their wide - range applications. 4. **Realizing a high - reliability non - volatile silicon photonics solution**: The paper proposes using charge - trap memory (CTM) as a reliable non - volatile silicon photonics solution in the near future to overcome the above challenges. Through these efforts, the paper shows how to realize non - volatile photonics functions through the heterogeneous III - V/Si photonics platform, including non - volatile operations of Mach - Zehnder interferometers (MZI), asymmetric MZI lattice filters, and ring resonator filters. In addition, the paper also explores the potential applications of this technology in eliminating the von Neumann bottleneck, realizing high - energy - efficiency large - scale integrated photonics, neuromorphic / brain - inspired optical networks, optical switching structures, optical phased arrays, quantum networks, and future optical computing architectures.

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