Abstract:Abstract The retention-of-state functionality provided by memories is fundamental to any Turing machine and neural network, hence is critical for any information system today. While emerging optical machine learning accelerators and photonic neuromorphic computing paradigms provide promising signal processing and computing performance, the lack of a photon-photon force in the universe makes storing optical information challenging. Fortunately, phase change materials provide such a missing memristive nonvolatile function via their reconfigurable crystalline structure and allow for rapid optical READ paradigms. However, demonstrations of photonic memory are limited by high optical loss, low state-cyclability, and rely on cumbersome non-CMOS like optical programmability. To overcome all three shortcomings and unlock the full potential of optical information storage and access, here we introduce a photonic random-access memory featuring vanishing low optical loss, demonstrate more than half a million switching cycles, a 100x improvement over state-of-art, and realize electrical programmability on-chip. The exceedingly low optical absorption (0.0015 dB/μm) is achieved via a novel broadband transparent phase change material, Ge2Sb2Se5 integrated atop a nanophotonic waveguide of a silicon chip. We show a highly efficient signal modulation (0.2 dB/μm) achieved by realizing a newly designed paired micro-heaters along both sides of waveguide, which allows for electronic-standard programmability of these photonic memories. When interrogated by an optical beam, they offer picosecond-short memory READ latency. Furthermore, we demonstrate a partial amorphization scheme realizing multi-state memory levels on a single heater enhancing footprint efficiency. Lastly, we verify the energy and switching speed and show how each trades-off with heater-to-waveguide proximity and signal strength, respectively. Such as CMOS-near electronically programmed and optical read photonic random-access memory with low-optical loss yet efficient programmability can become a crucial building block for network edge AI system of the looming industry 4.0 era.

Non-volatile silicon photonic memory with more than 4-bit per cell capability

Experimental investigation of silicon and silicon nitride platforms for phase-change photonic in-memory computing

Photonic non-volatile memories using phase change materials

Nonvolatile Electrically Reconfigurable Silicon Photonics Enabled by Back-End-of-line Integration of Phase Change Materials

High-Speed and Energy-Efficient Non-Volatile Silicon Photonic Memory Based on Heterogeneously Integrated Memresonator

High-Speed Multifunctional Photonic Memory on a Foundry-Processed Photonic Platform

Silicon Optical Memory: Non-Volatile Optoelectronic Devices via Si-SiO$_2$ Hysteresis Effect

Neuromorphic Photonic Memory Devices Using Ultrafast, Non‐volatile Phase‐change Materials

Thin film ferroelectric photonic-electronic memory

Optofluidic memory and self-induced nonlinear optical phase change for reservoir computing in silicon photonics

Electrical Programmable Multi-Level Non-volatile Photonic Random-Access Memory

High-bandwidth Light Inputting Multilevel Photoelectric Memory Based on Thin-Film Transistor with a Floating Gate of CsPbBr3/CsPbI3 Blend Quantum Dots

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory

Electrical Programmable Low-loss high cyclable Nonvolatile Photonic Random-Access Memory

Integrated magneto-photonic non-volatile multi-bit memory

Non‐Volatile Reconfigurable Integrated Photonics Enabled by Broadband Low‐Loss Phase Change Material

Seven Bit Nonvolatile Electrically Programmable Photonics Based on Phase-Change Materials for Image Recognition

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Heterogeneously Integrated Laser on Silicon with Non-Volatile Wavelength Tuning