Abstract:Optical memristors represent a monumental leap in the fusion of photonics and electronics, heralding a new era of new applications from neuromorphic computing to artificial intelligence. However, current technologies are hindered by complex fabrication, limited endurance, high optical loss or low modulation efficiency. For the first time, we unprecedentedly reveal optical non-volatility in thin-film Lead Zirconate Titanate (PZT) by electrically manipulating the ferroelectric domains to control the refractive index, providing a brand-new routine for optical memristors. The developed PZT optical memristors offer unprecedented advantages more than exceptional performance metrics like low loss, high precision, high-efficiency modulation, high stability quasi-continuity and reconfigurability. The wafer-scale sol-gel fabrication process also ensures compatible with standardized mass fabrication processes and high scalability for photonic integration. Specially, these devices also demonstrate unique functional duality: setting above a threshold voltage enables non-volatile behaviors, below this threshold allows volatile high-speed optical switching. This marks the first-ever optical memristor capable of performing high-speed signal processing and non-volatile retention on a single platform, and is also the inaugural demonstration of scalable functional systems. The PZT optical memristors developed here facilitate the realization of novel paradigms for high-speed and energy-efficient optical interconnects, programmable PICs, quantum computing, neural networks, in-memory computing and brain-like architecture.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are several key challenges existing in the current optical memristor technology, including complex manufacturing processes, limited durability, high optical loss or low modulation efficiency. Specifically: 1. **Complex manufacturing process**: Existing optical memristors usually require complex manufacturing processes, which limit their large - scale production and application. 2. **Limited durability**: The durability of existing technologies is limited, affecting their reliability and stability in practical applications. 3. **High optical loss**: High optical loss reduces the performance of the device, especially in applications requiring long - distance transmission. 4. **Low modulation efficiency**: Existing optical memristors have low modulation efficiency, limiting their application in high - speed signal processing. To solve these problems, for the first time, the paper reveals that the refractive index can be controlled by manipulating ferroelectric domains through an electric field in thin - film lead zirconate titanate (PZT), thereby achieving optical non - volatility. This finding provides a brand - new method for realizing optical memristors, with the following advantages: - **Low loss**: PZT optical memristors have low optical loss. - **High precision**: High - precision phase modulation can be achieved. - **Efficient modulation**: High modulation efficiency, suitable for high - speed signal processing. - **High stability**: Long - term stability and quasi - continuity. - **Reconfigurability**: It can be reconfigured by an electric field to achieve flexible photonic integration. In addition, PZT optical memristors also exhibit a unique functional duality: when the applied voltage exceeds the threshold voltage \( V_{\text{th}} \), the device exhibits non - volatile behavior; when the applied voltage is lower than \( V_{\text{th}} \), the device can perform high - speed volatile optical switching/modulation. This characteristic enables PZT optical memristors to simultaneously achieve high - speed signal processing and non - volatile storage on a single platform. The paper experimentally verifies the application potential of PZT optical memristors in various photonic integrated circuits (PICs), including micro - ring resonators (MRRs), Mach - Zehnder interferometers (MZIs) and Fabry - Perot cavities (FP cavities), and demonstrates their scalability and versatility in large - scale photonic integration. These results provide an important technological basis for realizing new high - speed, low - power optical interconnections, programmable photonic integrated circuits, quantum computing, neural networks, in - memory computing and brain - like architectures.

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