Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition
Biying Huang,Na Li,Qinqin Wang,Chen Ouyang,Congli He,Lianchang Zhang,Luojun Du,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang
DOI: https://doi.org/10.1002/admi.202201558
IF: 5.4
2022-10-06
Advanced Materials Interfaces
Abstract:Artificial optoelectronic synapses based on MoS2 field‐effect transistors (FETs) have been realized by integrating the sensing, memorizing, and preprocessing functions together. Basic opto‐synaptic functions, interest‐modulate human visual memory, and background noise filtering with a high recognition accuracy ≈85.5% were realized in the device which provide an alternative approach to construct neuromorphic visual systems. Neuromorphic chips show advantages over conventional computing system based on von Neumann architecture when dealing with complex scenes, such as artificial intelligence, automatic driving, image, and speech recognition. However, current neuromorphic circuitry usually suffers from device complexity, low computing speed, and efficiency issues. Here, the fabrication of artificial optoelectronic synapses based on MoS2 field‐effect transistors (FETs) to integrate the sensing, memorizing, and preprocessing functions together is reported. Light‐tunable and gate‐voltage modulated behaviors enable those devices to implement many opto‐synaptic functions, such as paired‐pulse facilitation (PPF), short‐term memory (STM), long‐term memory (LTM), the transition of STM‐to‐LTM, and interest‐modulate human visual memory. Moreover, background noise filtering for image preprocessing with a high recognition accuracy ≈85.5% is realized in MoS2‐based optoelectronic array devices. These simple but prospective opto‐synaptic devices provide an alternative approach to construct neuromorphic visual systems.
materials science, multidisciplinary,chemistry