Plasmonic Optoelectronic Memristor Enabling Fully Light‐Modulated Synaptic Plasticity for Neuromorphic Vision
Xuanyu Shan,Chenyi Zhao,Xinnong Wang,Zhongqiang Wang,Shencheng Fu,Ya Lin,Tao Zeng,Xiaoning Zhao,Haiyang Xu,Xintong Zhang,Yichun Liu
DOI: https://doi.org/10.1002/advs.202104632
IF: 15.1
2021-12-29
Advanced Science
Abstract:Exploration of optoelectronic memristors with the capability to combine sensing and processing functions is required to promote development of efficient neuromorphic vision. In this work, the authors develop a plasmonic optoelectronic memristor that relies on the effects of localized surface plasmon resonance (LSPR) and optical excitation in an Ag-TiO<sub>2</sub> nanocomposite film. Fully light-induced synaptic plasticity (e.g., potentiation and depression) under visible and ultraviolet light stimulations is demonstrated, which enables the functional combination of visual sensing and low-level image pre-processing (including contrast enhancement and noise reduction) in a single device. Furthermore, the light-gated and electrically-driven synaptic plasticity can be performed in the same device, in which the spike-timing-dependent plasticity (STDP) learning functions can be reversibly modulated by visible and ultraviolet light illuminations. Thereby, the high-level image processing function, i.e., image recognition, can also be performed in this memristor, whose recognition rate and accuracy are obviously enhanced as a result of image pre-processing and light-gated STDP enhancement. Experimental analysis shows that the memristive switching mechanism under optical stimulation can be attributed to the oxidation/reduction of Ag nanoparticles due to the effects of LSPR and optical excitation. The authors' work proposes a new type of plasmonic optoelectronic memristor with fully light-modulated capability that may promote the future development of efficient neuromorphic vision.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry