Abstract:We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to evaluate the performance of field - effect transistors (FETs) based on the newly synthesized two - dimensional material MoSi₂N₄ (monolayer), and compare it with existing advanced silicon - based FETs, carbon nanotube - based FETs and other promising two - dimensional material - based FETs. Specifically, the research objectives include: 1. **Performance evaluation**: Evaluate the performance of MoSi₂N₄ FETs according to the prediction of the International Roadmap for Devices and Systems (IRDS 2020) for 2034. 2. **Channel length scalability**: Study the performance changes of MoSi₂N₄ FETs at different channel lengths, especially its immunity to source - to - drain tunneling (SDT). 3. **Logic circuit performance**: Estimate the key performance indicators (FOMs) of combinational logic circuits (such as 32 - bit adders) and sequential logic circuits (such as ALUs) based on MoSi₂N₄ FETs, and benchmark them against CMOS and other beyond - CMOS logic technologies. ### Main problem summary - **Application potential of new materials**: As a new two - dimensional semiconductor material, MoSi₂N₄ has excellent mechanical, electronic, optical and thermal properties. Can it become an ideal candidate material for future electronic devices? - **Performance superiority**: Through first - principles quantum transport simulations, verify whether the performance of MoSi₂N₄ FETs in terms of switching speed, power consumption, current density, etc. is superior to existing silicon - based FETs and carbon nanotube FETs. - **Feasibility of logic circuits**: Can logic circuits constructed based on MoSi₂N₄ FETs show a competitive advantage in future integrated circuits? ### Formula display The formulas involved in this paper are mainly used to describe quantum transport characteristics, for example: - **Transmission coefficient**: \[ T(E, k, V_{\text{gs}}, V_{\text{ds}})=\text{Trace}[\Gamma_S G^R \Gamma_D G^A] \] - **Current calculation** (Landauer - Büttiker method): \[ I_{\text{ds}}(V_{\text{gs}}, V_{\text{ds}})=\frac{e}{\pi \hbar}\int_{-\infty}^{\infty}\sum_k T(E, k, V_{\text{gs}}, V_{\text{ds}})[f(E - \mu_s)-f(E - \mu_d)]dE \] These formulas are used to simulate and calculate the electrical characteristics of FETs to ensure the accuracy and reliability of theoretical analysis.

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