Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

Effect of Ge content on diode parameters of superstrate type Cu2ZnSn1−xGexS4/CdS heterostructures prepared by all-solution process

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Improving the performance of low-cost water-based solution-synthesised Cu2ZnSn1-Ge (S,Se)4 absorber thin films by germanium doping

Influence of Mg concentration in Zn1-Mg O buffer layers for enhanced Cu2(Sn,Ge)S3 solar cells performance

Unveiling the Role of Ge in CZTSSe Solar Cells by Advanced Micro‐To‐Atom Scale Characterizations

Boosting Efficiency and Stability of a Cu2ZnSnS4 Photocathode by Alloying Ge and Increasing Sulfur Pressure Simultaneously

Analyzing the synergistic effect of Ag and Ge co-incorporation on Cu2ZnSnSe4 thin-film solar cells

Improving the performance of kesterite solar cells by solution germanium alloying

Fabrication of Cu2Sn1-xGexS3 Thin-Film Solar Cells via Sulfurization of Cu2GeS3/Cu2SnS3 Stacked Precursors

Effects of Germanium Doping on the Microstructure and Photoelectrochemical Properties of TiO2 Films by Sol-Gel Method

Effect of Ge Incorporation on Lead‐free Cs‐based Triiodide Sn‐Ge Co‐alloy Perovskite Thin Films by Spin Coating

First Principles Calculation Study of Zn1-xMgxO/Cu2ZnSnS4 Heterointerface

Influences of Mg concentration in ZnMgO film on energy band alignment at CIGSSe/Zn1-xMgxO interface and performances of CIGSSe solar cells

Influence of Sn Doping on the Structure and Photoelectric Performance of CsGeCl3

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

GeSe-based hole transport layer for efficient Cu 2 CdSnS 4 heterojunction solar cells: A simulation approach

Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite

Synergetic Effects of Zn Alloying and Defect Engineering on Improving the CdS Buffer Layer of Cu2ZnSnS4 Solar Cells