Abstract:To reduce the prominent VOC-deficit that limits kesterite-based solar cells efficiencies, Ge has been proposed over the recent years with encouraging results, as the reduction of the non-radiative recombination rate is considered as a way to improve the well-known Sn-kesterite world record efficiency. To gain further insight into this mechanism, we investigate the physical behaviour of intrinsic point defects both upon Ge doping and alloying of Cu2ZnSnS4 kesterite. Using a first-principles approach, we confirm the p-type conductivity of both Cu2ZnSnS4 and Cu2ZnGeS4, attributed to the low formation energies of the VCu and CuZn acceptor defects within the whole stable phase diagram range. Via doping of the Sn-kesterite matrix, we report the lowest formation energy for the substitutional defect GeSn. We also confirm the detrimental role of the substitutional defects XZn (X=Sn,Ge) acting as recombination centres within the Sn-based, the Ge-doped and the Ge-based kesterite. Finally, we highlight the reduction of the lattice distortion upon Ge incorporation resulting in a reduction of the carrier capture cross section and consequently a decrease of the non-radiative recombination rate within the bulk material.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to control the physical behavior of point defects in copper - zinc - tin - sulfur (CZTS, i.e., kesterite) materials through germanium (Ge) doping or alloying, so as to reduce the open - circuit voltage loss (VOC - deficit) and further improve the efficiency of kesterite - based solar cells. Specifically, the research focuses on the following points: 1. **Reducing the non - radiative recombination rate**: Reducing the non - radiative recombination rate in kesterite materials through Ge doping, which is one of the key factors in improving the efficiency of solar cells. 2. **Understanding the behavior of point defects**: Studying the influence of Ge doping and alloying on the physical behavior of inherent point defects in Cu₂ZnSnS₄ (CZTS) and Cu₂ZnGeS₄ (CZTGeS), especially the formation energy and charge state of these defects at different Fermi levels. 3. **Optimizing material properties**: Through first - principles calculations, confirming the influence of Ge doping and alloying on the conductivity of kesterite materials, and how to optimize the photoelectric properties of materials by controlling point defects. 4. **Reducing lattice distortion**: Exploring the reduction of lattice distortion after Ge doping, which helps to reduce the carrier capture cross - section, thereby further reducing the non - radiative recombination rate. In summary, this research aims to provide theoretical support and technical guidance for improving the efficiency of kesterite - based solar cells by deeply understanding the influence of Ge doping and alloying on point defects in kesterite materials.

Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite