Abstract:In recent decades, the demand for clean energy has promoted extensive research on solar cells as a key renewable energy source. Among the various emerging absorber layer materials, Kesterite-type semiconductors have aroused significant interest. Especially, Kesterite Cu 2 ZnSnS 4 (CZTS) stands out as a promising candidate for low-cost thin-film solar cells due to its direct bandgap, high optical absorption coefficient, suitable bandgap (1.39–1.52 eV), and abundance of constituent elements. However, the power conversion efficiency (PCE) of CZTS-based solar cells currently lags behind that of Cu(In,Ga)Se 2 (CIGS) cells, mainly due to insufficient open-circuit voltage caused by a large number of disordered cations and defect clusters, resulting in non-radiative recombination and band-tail states. To address these challenges, partial or complete cation substitution has become a viable strategy for altering the harmful defects in CZTS. This study proposes a heterovalent substitution of Zn in CZTS and explores the potential of novel quaternary chalcogenide compound A 2 M 2 M'Q 4 ( A = Na, K, Rb, Cs, In, Tl; M = Cu, Ag, Au; M' = Ti, Zr, Hf, Ge, Sn; Q = S, Se, Te) as absorbers for solar cells. By substituting elements in five prototype structures, a comprehensive material database comprising 1350 A 2 M 2 M'Q 4 compounds is established. High-throughput screening and first-principles calculations are used to evaluate the thermodynamic stabilities, band gaps, spectroscopic limited maximum efficiencies (SLMEs), and phonon dispersions of these compounds. Our research results indicate that 543 compounds exhibit thermodynamic stability ( E hull < 0.01 eV/atom), 202 compounds possess suitable band gaps (1.0–1.5 eV), and 10 compounds meet all the criteria for thermodynamic and dynamic stability, suitable band gaps, and high optical absorption performance (10 4 –10 6 cm –1 ), with theoretical SLME values exceeding 30%. Notably, Ibam -Rb 2 Ag 2 GeTe 4 exhibits the highest SLME (31.8%) in these candidates, featuring a band gap of 1.27 eV and a small carrier effective mass (< m 0 ). The electronic structures and optical properties of these compounds are comparable to those of CZTS, which makes them suitable for highly efficient single-junction thin-film solar cells. All the data presented in this work can be found at https://www.doi.org/10.57760/sciencedb.j00213.00006 .

First Principles Calculation Study of Zn1-xMgxO/Cu2ZnSnS4 Heterointerface

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

The Band Offset at CdS/Cu 2 ZnSnS 4 Heterojunction Interface

Synergetic Effects of Zn Alloying and Defect Engineering on Improving the CdS Buffer Layer of Cu2ZnSnS4 Solar Cells

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

Stability and Electronic Structure of Cu2znsns4 Surfaces: First-Principles Study

Calculation of Band Alignment and Interfacial Recombination in CZTS-Based Solar Cell

Composition dependent band offsets of ZnO and its ternary alloys

CdS(In)/CZTSSe bandgap alignment engineering for performance enhancement of solar cells without ZnO layer

Electronic structures of Zn1-xGaxO1-xNx and band offsets of the ZnO/Zn1-xGaxO1-xNx heterojunction across the entire concentration range from first principles

Influences of Mg concentration in ZnMgO film on energy band alignment at CIGSSe/Zn1-xMgxO interface and performances of CIGSSe solar cells

ZnO1−xSx Solid Solution as Potential Buffer Layer Materials for Cu2ZnSnS4‐Based Thin Film Solar Cells: Structural and Interfacial Properties

Interfacial Engineering to Improve Cu2ZnSnX4 (X = S, Se) Solar Cell Efficiency

Cu2Zn(Sn,Ge)Se4and Cu2Zn(Sn,Si)Se

Energy Band Alignment at p-n Heterojunction Interface in CZTSSe Solar Cells with Novel ZnMgO Buffer Layer

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

First-Principles GGA+U Study of Intermediate-Band Characters from Zn 1-X M X O（M=3d Transition-Metal）Alloys Suitable for High Efficiency Solar Cell

Atomic-Scale Interface Modification Improves the Performance of Cu(In1- xGax)Se2/Zn(O,S) Heterojunction Solar Cells

Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites

Photovoltaic properties of novel quaternary chalcogenides based on high-throughput screening and first-principles calculations