Abstract:This paper reports a facile chemical strategy for producing atomically thin PdSe2 nanosheets using electrochemical intercalation. The as‐exfoliated PdSe2 nanosheets undergo structural phase transition after thermal annealing to transform into metallic PdSe2‐x. Moreover, controllable phase transformation is demonstrated by van der Waals encapsulation, which leads to the formation of a metal‐semiconductor junction. This paper illustrates the potential of phase‐change materials in nanoelectronics. 2D orthorhombic palladium diselenide is attracting rapidly increased interest by virtue of its fascinating physical properties and feasibility of phase transformation. However, it remains a major challenge to produce ultrathin PdSe2 through a facile chemical route and control phase transformation because of its anisotropic structure with strong interlayer coupling. Here, the efficient synthesis of few‐layer PdSe2 nanosheets with large sizes using an electrochemical exfoliation approach is reported. Upon thermal annealing at 300–350 °C, the as‐exfoliated PdSe2 nanosheets transform into metallic phase PdSe2‐x, as verified by scanning transmission electron microscopy, Raman spectroscopy, and electrical characterizations. Simple encapsulation using hexagonal boron nitride (h‐BN) can effectively suppress the Se‐loss triggered phase transformation, so that a metal‐semiconductor junction is formed by local phase modification. The fabricated PdSe2 field‐effect transistors exhibit p‐type transport property, which is in stark contrast to electron‐dominated ambipolar transport of pristine PdSe2 devices. The combination of high‐resolution X‐ray photoelectron spectroscopy and cross‐sectional transmission electron microscopy analysis reveals that the modulation of carrier polarity in h‐BN encapsulated PdSe2 should arise from the p‐doping effect associated with the impact of interfacial condition. The study opens up a new route for future phase‐engineered electronics in PdSe2 and other 2D noble metal dichalcogenides materials.

Field emission in ultrathin PdSe2 back-gated transistors

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Achieving Ultrahigh Electron Mobility in PdSe2 Field‐Effect Transistors via Semimetal Antimony as Contacts

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Thickness-dependent Carrier Transport of PdSe2 Films Grown by Plasma-Assisted Metal Selenization

Thickness-dependent carrier transport of PdSe 2 films grown by plasma-assisted metal selenization

Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

A WSe2 vertical field emission transistor

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

1D van der Waals Nb2Pd3Se8‐Based n‐Type Field‐Effect Transistors Prepared by Liquid Phase Exfoliation

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

Controllable Phase Transformation by Van der Waals Encapsulation in Electrochemically Exfoliated PdSe2 Nanosheets

Switching Performance Assessment of Bilayer PtSe2 Tunneling Field Effect Transistor

Construction of Bilayer PdSe 2 on Epitaxial Graphene

Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors

Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors

Enhanced Photoresponse of Highly Air-Stable Palladium Diselenide by Thickness Engineering