Abstract:Two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDCs), have gathered significant attention due to their interesting electrical and optical properties. Among TMDCs, monolayers of WSe 2 exhibit a direct band gap and high exciton binding energy, which enhances photon emission and absorption even at room temperature. This study investigates the electronic and optical properties of WSe 2 monolayers when they are mechanically transferred to indium tin oxide (ITO) substrates. ITO is a transparent conducting electrode (TCE) used in many industrial opto-electronic applications. Samples were mechanically transferred under ambient conditions, consequently trapping an adsorbate layer of atmospheric molecules unintentionally between the monolayer and the substrate. To reduce the amount of adsorbates, some samples were thermally annealed. Atomic force microscopy (AFM) confirmed the presence of the adsorbate layer under the TMD and its partial removal after annealing. X-ray photoelectron spectroscopy (XPS) confirmed the presence of carbon species among the adsorbates even after annealing. Photoluminescence (PL) measurements show that WSe 2 remains optically active on ITO even after annealing. Moreover, the luminescence intensity and energy are affected by the amount of adsorbates under the WSe 2 monolayer. Scanning Tunnelling Spectroscopy reveals that the TMD monolayer is n-doped, and that its band edges form a type I band alignment with ITO.. Surface potential measurements show a polarity change after annealing, indicating that polar molecules, most likely water, are being removed. This comprehensive study shows that a TCE does not quench WSe 2 luminescence even after a prolonged thermal annealing, although its optical and electronic properties are affected by unintentional adsorbates. These findings provide insights for better understanding, controlling, and design of 2D material heterostructures on TCEs.

Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Electron and Hole Mobilities in Single-Layer WSe2

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

A Study of Lateral Schottky Contacts in WSe2 and MoS2 Field Effect Transistors Using Scanning Photocurrent Microscopy.

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Transient Characteristics of Back-Gated Multilayer MoS2 and WSe2 Channel N-Type Metal Oxide Semiconductor Field Effect Transistors: A Comparative Study

Field emission in ultrathin PdSe2 back-gated transistors

A WSe2 vertical field emission transistor

Gate-bias Instability of Few-Layer WSe2 Field Effect Transistors

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$

The ambipolar transport behavior of WSe 2 transistors and its analogue circuits

Transport Study of Charge-Carrier Scattering in Monolayer

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Investigating the impact of ITO substrates on the optical and electronic properties of WSe 2 monolayers

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Role of hexagonal boron nitride configuration in gate-induced hysteresis of WSe 2 field-effect transistors