Abstract:Anti-ambipolar behavior has been observed in multilayer two-dimensional semiconductors and many p–n junctions. However, temperatures in the range of tens of kelvin are usually required, and there are gaps in the understanding of the underlying physics, most notably the roles of the space charge region and van der Waals (vdW) heterojunction. Here, we systematically investigate the unique transport and transfer characteristics of vertically stacked vdW contacted p-WSe2/n-SnS2 and p-WSe2/n-MoS2 junctions. Interestingly, robust anti-ambipolar behavior is observed at low and room temperature for both darkened and illuminated conditions. A peak-to-valley current ratio exceeding 104 and on-state gating field ranging from −0.3 × 106 to 0.57 × 106 V/cm are achieved at room temperature in darkness. Moreover, the rectifying effect and the type of majority charge carrier of the WSe2/SnS2 junction can be tuned by an electric gate. Robust Raman quenching over the whole interface induced by strong charge transfer is also observed. Based on an equivalent circuit model, a Poisson and drift-diffusion simulation, and experiments with local illumination, we highlight the role of the van der Waals heterojunction. We show that the observed unique anti-ambipolar behavior is due to the recombination of electrons and holes at the space charge region rather than carrier diffusion in the turned-off metal-oxide-semiconductor field-effect transistor (MOSFET). A larger vdW barrier and interface recombination at the vdW barrier are key to having a strong on/off ratio especially at room temperature. The p–n vdW heterostructure plays the roles of a complementary MOSFET connecting with a heterojunction diode, not only a ternary logic inverter but also a tunable multiple-gain amplifier in wide-range gating fields. The width of the middle logic plateau can reach 45 V in a WSe2/MoS2 junction.

The ambipolar transport behavior of WSe 2 transistors and its analogue circuits

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

The Ambipolar Evolution of a High-Performance WSe2 Transistor Assisted by a Ferroelectric Polymer.

Electron and Hole Mobilities in Single-Layer WSe2

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

Anisotropic Carrier Mobility from 2H WSe2

Anisotropic Carrier Mobility from 2H WSe 2

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Van Der Waals Contacted WSe 2 Ambipolar Transistor for In-Sensor Computing

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

Controlling phase transition in WSe2 towards ideal n-type transistor

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Low Resistance Ohmic Contact to P-type Monolayer WSe2