Space charge limited photocurrents and transient currents in CdZnTe radiation detectors

Katarina Ridzonova,Eduard Belas,Roman Grill,Jakub Pekarek,Petr Praus
DOI: https://doi.org/10.1103/PhysRevApplied.13.064054
2020-01-15
Abstract:We combined steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study the space charge formation in CdZnTe. Analytical as well as numerical models describing space charge limited photocurrents were developed and an excellent agreement with measured data was obtained especially with the Drift-diffusion model. Linear rise of photocurrent at low bias was observed and ascribed to the trapping of injected holes at the region close to the cathode side. Influence of space charge formation, photoconductive gain, contribution of shallow and deep levels to photocurrent-voltage characteristics were numerically simulated. According to the measurements and calculations, recent principles used at the evaluation of detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.
Applied Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the mechanism of space - charge formation in CdZnTe radiation detectors and its influence on the characteristics of photocurrent. Specifically, the author studied the space - charge formation process in CdZnTe materials under illumination conditions exceeding the bandgap by combining steady - state photoconductivity measurements and laser - induced transient current measurements. Analytic and numerical models were developed to describe the space - charge - limited photocurrent and compared with experimental data to verify the validity of these models. The paper mainly focuses on the following aspects: 1. **Influence of space - charge formation on photocurrent**: The study investigated how space - charge affects the generation and transport of photocurrent, especially the linear growth phenomenon at low bias voltages. 2. **Photoconductive gain and contributions of shallow and deep energy levels**: The influence of space - charge formation, photoconductive gain, and shallow and deep energy levels on the photocurrent - voltage characteristics was explored. 3. **New methods for evaluating detector performance**: Through the measurement and simulation of photocurrent characteristics, the existing methods for evaluating detector performance were re - evaluated, especially the accuracy of the carrier mobility - lifetime product (\(\mu\tau\)) obtained from photoconductivity measurements. ### Main models and formulas 1. **Single - carrier formula**: \[ J_{\text{SCLC}}=\frac{9}{8}\epsilon_0\epsilon_r\mu_e\theta\left(\frac{V}{L}\right)^2 \] where \(\epsilon_0\) and \(\epsilon_r\) are the vacuum permittivity and relative permittivity respectively, \(\mu_e\) is the electron mobility, \(V\) is the bias voltage, \(L\) is the sample thickness, and \(\theta\) is the ratio of free - electron density to total - electron density. 2. **Ratio of free - electron density to trapped - electron density**: \[ \theta = \frac{n}{n + n_t} \] where \(n\) is the free - electron density and \(n_t\) is the trapped - electron density. 3. **Relationship between trapped - electron density and free - electron density**: \[ \frac{n_t}{n}=\frac{gN_t}{N_C}e^{\frac{E_t}{k_BT}} \] where \(N_C\) is the effective density of states in the conduction band, \(g\) is the degeneracy factor of the trap, \(N_t\) is the trap density, \(E_t\) is the energy depth of the trap relative to the conduction band, and \(T\) is the temperature. 4. **Photocurrent - voltage characteristics**: \[ J=\frac{J_0}{1+\frac{s_en(0)}{\mu_eE\mu_e\tau_eEL}\left[1 - e^{-\frac{L}{\mu_e\tau_eE}}\right]} \] where \(J_0\) is the saturated photocurrent, \(s_e\) is the surface recombination velocity, \(\mu_e\) is the electron mobility, \(\tau_e\) is the electron lifetime, \(E\) is the internal electric field, and \(L\) is the sample thickness. ### Experimental methods - **Steady - state photoconductivity measurement**: Measure the photocurrent - voltage characteristics under continuous illumination. - **Laser - induced transient current technique (L - TCT)**: Use laser pulses to excite transient currents and analyze the shape of the current waveform to evaluate the drift mobility, lifetime of carriers, and the distribution of electric fields and space charges. ### Results and discussion - **Photocurrent characteristics**: The experimental data show that the photocurrent first increases linearly with the increase of bias voltage and then reaches saturation. This indicates that at low bias voltages, the formation of space - charge significantly shields the electric field near the cathode side, causing some photo - generated electrons to disappear without reaching the anode. At high bias voltages, this shielding effect weakens and most photo - generated electrons are collected. - **Model comparison**: By comparing the fitting results of the Many equation, the SCLP1 model and the Drift - diffusion model, it was found that the SCLP1 model has a higher degree of agreement with the experimental data.