Abstract:Space-charge-limited current (SCLC) measurements are used to estimate charge carrier mobilities and electronic trap densities of semiconductors by analysing the current density-voltage (JV) relationship for unipolar devices predicted by the Mott-Gurney (MG) law. However, the interpretation of SCLC measurements for metal-halide perovskites is problematic due to mobile ionic defects which redistribute to screen electrostatic fields in devices during measurements. To overcome this, an SCLC measurement protocol was recently suggested that minimises ionic charge redistribution by probing the current during millisecond voltage pulses superimposed on a background bias. Here, we use drift-diffusion simulations with mobile ions to assess the validity of the MG law for analysing both the standard and new protocol JV measurements. We simulated idealised perovskite devices with differing mobile ion densities and compared them with simulations and measurements of devices with typical contact materials. We found the validity region for the MG law is limited to perovskites with mobile ion densities lower than the device's equilibrium charge carrier density (<10^17 cm-3 for 400 nm thick methylammonium lead iodide films) and contacts with injection/extraction barriers <=0.1 eV. The latter limitation can be partially overcome by increasing the device thickness, whereas the former limitation cannot. This restricts the range of perovskite layer compositions and viable contact materials that can be reliably analysed with the MG law. Approaches such as estimating trap densities from the apparent voltage onset to trap-free SCLC regime should also be critically reviewed since they rely on the same potentially invalid assumptions as the MG law. Our results demonstrate that extracting meaningful and accurate values for metal halide perovskite material properties from SCLC maybe challenging, or often not possible.

Ion Migration and Space‐Charge Zones in Metal Halide Perovskites Through Short‐Circuit Transient Current and Numerical Simulations

Ion Leakage Current Control for Polycrystalline Metal Halide Perovskite Direct X-ray Detectors

The Impact of Measurement Atmosphere on the Ion Migration in Mixed-halide Perovskites

Numerical modeling of defects induced dark current in halide perovskite X-ray detectors

Revealing Charge Carrier Mobility and Defect Densities in Metal Halide Perovskites via Space-Charge-Limited Current Measurements

Suppressing the Ion Migration in Halide Perovskite Wafers for Current-Drift Free X-ray Detectors

Ion migration and dark current suppression in quasi-2D perovskite-based X-ray detectors

Halide ion migration in lead-free all-inorganic cesium tin perovskites

Ion Migration Controlled Stability in Α-Particle Response of CsPbBr2.4Cl0.6 Detectors

The Validity Window of Space-Charge-Limited Current Measurements of Metal Halide Perovskite Devices

Ion Migration: A “double‐edged Sword” for Halide‐Perovskite‐Based Electronic Devices

Intrinsic ion migration dynamics in a one-dimensional organic metal halide hybrid

Suppressing Ion Migration in Metal Halide Perovskite Via Interstitial Doping with a Trace Amount of Multivalent Cations

Elimination of Interfacial‐Electrochemical‐Reaction‐Induced Polarization in Perovskite Single Crystals for Ultrasensitive and Stable X‐Ray Detector Arrays

Ballistic-like space-charge-limited currents in halide perovskites at room temperature

Direct Observation of Halide Migration and Its Effect on the Photoluminescence of Methylammonium Lead Bromide Perovskite Single Crystals

First‐Principles Calculation Design for 2D Perovskite to Suppress Ion Migration for High‐Performance X‐ray Detection

Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites

Mitigation of Parasitic and Drift Capacitance-Induced Nonlinear Current Responses for Stable and Sensitive Perovskite X-ray Detectors

Halide Ion Migration in Perovskite Nanocrystals and Nanostructures.

Factors influencing halide vacancy transport in perovskite solar cells