Elimination of Interfacial‐Electrochemical‐Reaction‐Induced Polarization in Perovskite Single Crystals for Ultrasensitive and Stable X‐Ray Detector Arrays

Yilong Song,Liqi Li,Mingwei Hao,Weihui Bi,Anran Wang,Yifei Kang,Hanming Li,Xiaohui Li,Yanjun Fang,Deren Yang,Qingfeng Dong

DOI: https://doi.org/10.1002/adma.202103078

IF: 29.4

2021-10-22

Advanced Materials

Abstract:Organic-inorganic halide perovskites have exhibited bright prospects in high sensitivity X-ray detection. However, they generally suffer from the severe field-driven polarization issue that remarkably deteriorates the detection performance. Here, we demonstrate that the interfacial electrochemical reaction between Au electrodes and halogen in MAPbI3 single crystals (SCs) is the major source of the dark current polarization in the metal-semiconductor-metal (MSM) structured perovskite X-ray detectors at the initial stage of biasing. By introducing the p- and n-type charge transport layers to isolate the electrodes from contacting the SC surface, we are able to fully eliminate the polarization under a large electric field up to 1000 V cm–1. Moreover, the resultant lateral p-i-n heterojunction suppresses the dark current of the devices by nearly three orders of magnitude as compared to the MSM counterparts and therefore enables a high sensitivity of 5.2×106 μC Gy–1air cm–2 and a record low X-ray detection limit down to 0.1 nGyair s–1. The excellent biasing stability and sensitivity of the devices allow us to prepare the linear detector arrays for X-ray imaging applications.This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the polarization phenomenon in perovskite single - crystal X - ray detectors due to the interfacial electrochemical reaction, which seriously affects the detection performance of the detectors. Specifically, the paper points out that in the perovskite X - ray detectors with a metal - semiconductor - metal (MSM) structure, the gold electrode and the halogen in the MAPbI₃ single crystal will undergo an electrochemical reaction under the action of an external bias voltage, which is the main cause of the dark - current polarization in the initial stage. This polarization phenomenon not only affects the transient response of the detector but also leads to a large dark current, thereby reducing the signal - to - noise ratio.

To solve this problem, the researchers proposed a method, that is, by introducing p - type and n - type charge - transport layers to isolate the direct contact between the electrode and the single - crystal surface, thus effectively suppressing the electrochemical reaction. This method not only eliminates the polarization phenomenon under a large electric field as high as 1000 V/cm, but also reduces the dark current of the device by nearly three orders of magnitude by forming a lateral p - i - n heterojunction, thereby achieving high sensitivity (5.2 × 10⁶ μC Gy⁻¹ air cm⁻²) and a record - low X - ray detection limit (about 0.1 nGy air s⁻¹). These improvements make it possible to design and fabricate high - performance linear - array detectors for X - ray imaging.