Abstract:Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there is still a need to search and develop new high performance quantum emitters. Searching a high-throughput computational database of more than 22,000 charged complex defects in silicon, we identify a series of defects formed by a group III element combined with carbon ((A-C)$\rm _{Si}$ with A=B,Al,Ga,In,Tl) and substituting on a silicon site. These defects are analogous structurally, electronically and chemically to the well-known T center in silicon ((C-C-H)$\rm_{Si}$) and their optical properties are mainly driven by an unpaired electron in a carbon $p$ orbital. They all emit in the telecom and some of these color centers show improved properties compared to the T center in terms of computed radiative lifetime or emission efficiency. We also show that the synthesis of hydrogenated T center-like defects followed by a dehydrogenation annealing step could be an efficient way of synthesis. All the T center-like defects show a higher symmetry than the T center making them easier to align with magnetic fields. Our work motivates further studies on the synthesis and control of this new family of quantum defects, and also demonstrates the use of high-throughput computational screening to detect new complex quantum defects.

High-throughput identification of spin-photon interfaces in silicon

High-throughput identification of spin-photon interfaces in silicon

Computationally Driven Discovery of T Center-like Quantum Defects in Silicon

Discovery of T center-like quantum defects in silicon

Quantum bit with telecom wave-length emission from a simple defect in Si

Spin-photon entanglement interfaces in silicon carbide defect centers

Cavity-coupled telecom atomic source in silicon

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

Database of semiconductor point-defect properties for applications in quantum technologies

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Silicon Carbide Based Quantum Networking

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Heterogeneous integration of spin–photon interfaces with a CMOS platform

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Inverse-designed photon extractors for optically addressable defect qubits

Quantum spin probe of single charge dynamics

Heterogeneous integration of spin-photon interfaces with a scalable CMOS platform

Nanoelectromechanical control of spin-photon interfaces in a hybrid quantum system on chip

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide