Abstract:Solid-state point defects are attracting increasing attention in the field of quantum information science, because their localized states can act as a spin-photon interface in devices that store and transfer quantum information, which have been used for applications in quantum computing, sensing, and networking. In this work we have performed high-throughput calculations of over 50,000 point defects in various semiconductors including diamond, silicon carbide, and silicon. Focusing on quantum applications, we characterize the relevant optical and electronic properties of these defects, including formation energies, spin characteristics, transition dipole moments, zero-phonon lines. We find 2331 composite defects which are stable in intrinsic silicon, which are then filtered to identify many new optically bright telecom spin qubit candidates and single-photon sources. All computed results and relaxed defect structures are made publicly available online at <a class="link-external link-http" href="http://quantumdefects.com" rel="external noopener nofollow">this http URL</a>, a living database of defect characteristics which will be continually expanded with new defects and properties, and will enable researchers to select defects tailored to their applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to discover semiconductor point defects suitable for quantum technology applications through high - throughput calculations, especially those with optimized optical and electronic properties for use in fields such as quantum computing, quantum sensing, and quantum networking. Specifically, the authors focus on solid - state point defects (i.e., atomic - scale imperfections in materials), which can serve as spin - photon interfaces and play a crucial role in quantum information storage and transmission devices. However, the known color - center defects do not possess ideal properties for quantum information science (QIS) applications, and sufficient candidate defects have not yet been found. Therefore, the authors carried out large - scale first - principles calculations with the following aims: 1. **Generate a large number of candidate defects**: By combining different elements and vacancies, generate more than 50,000 point - defect structures, including single - atom, di - atom, tri - atom, and tetra - atom composite defects. 2. **Screen for stable and potentially useful defects**: Calculate key properties such as formation energy, spin characteristics, transition dipole moment, and zero - phonon line of these defects, and screen out the stable composite defects in intrinsic silicon. 3. **Identify new qubit and single - photon - source candidates**: Pay special attention to defects with zero - phonon lines in the telecom band and non - trivial spin ground states, which can be used as spin qubits or single - photon sources. 4. **Establish a public database**: Organize all calculation results and relaxed defect structures into an online database (quantumdefects.com) for researchers to query and use. Through these steps, the authors hope to accelerate the discovery of new material defects suitable for quantum information science applications and provide guidance for experimental synthesis.

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